Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 616

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB80R290C3AATMA1 MOSFET P-CH TO263-3 Infineon Technologies	4,887	-	询价单	数据表	*	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC100N04S402ATMA1 MOSFET N-CH 40V 100A 8TDSON Infineon Technologies	7,989	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	2.4mOhm @ 50A, 10V	Surface Mount	4V @ 80µA	105 nC @ 10 V	40 V	±20V	8100 pF @ 25 V	AEC-Q101	-	PG-TDSON-8-23	Automotive	150W (Tc)	-55°C ~ 175°C (TJ)
IPD65R650CEATMA1 MOSFET N-CH 650V 10.1A TO252-3 Infineon Technologies	7,288	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.1A (Tc)	10V	650mOhm @ 2.1A, 10V	Surface Mount	3.5V @ 210µA	23 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TO252-3	-	86W (Tc)	-40°C ~ 150°C (TJ)
IPD85P04P407ATMA1 MOSFET P-CH 40V 85A TO252-3 Infineon Technologies	2,472	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	85A (Tc)	10V	7.3mOhm @ 85A, 10V	Surface Mount	4V @ 150µA	89 nC @ 10 V	40 V	±20V	6085 pF @ 25 V	AEC-Q101	-	PG-TO252-3-313	Automotive	88W (Tc)	-55°C ~ 175°C (TJ)
IPI120N08S403AKSA1 MOSFET N-CH 80V 120A TO262-3 Infineon Technologies	4,497	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.8mOhm @ 100A, 10V	Through Hole	4V @ 223µA	167 nC @ 10 V	80 V	±20V	11550 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	278W (Tc)	-55°C ~ 175°C (TJ)
IPI120N08S404AKSA1 MOSFET N-CH 80V 120A TO262-3 Infineon Technologies	5,070	-	询价单	数据表	OptiMOS™ T2	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.4mOhm @ 100A, 10V	Through Hole	4V @ 120µA	95 nC @ 10 V	80 V	±20V	6450 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	179W (Tc)	-55°C ~ 175°C (TJ)
IPI120N10S403AKSA1 MOSFET N-CH 100V 120A TO262-3 Infineon Technologies	9,857	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	3.9mOhm @ 100A, 10V	Through Hole	3.5V @ 180µA	140 nC @ 10 V	100 V	±20V	10120 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	250W (Tc)	-55°C ~ 175°C (TJ)
IPI120N10S405AKSA1 MOSFET N-CH 100V 120A TO262-3 Infineon Technologies	8,076	-	询价单	数据表	OptiMOS™ T2	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	5.3mOhm @ 100A, 10V	Through Hole	3.5V @ 120µA	91 nC @ 10 V	100 V	±20V	6540 pF @ 25 V	AEC-Q101	-	PG-TO262-3-1	Automotive	190W (Tc)	-55°C ~ 175°C (TJ)
IPS60R1K5CEAKMA1 CONSUMER Infineon Technologies	6,368	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	1.5Ohm @ 1.1A, 10V	Through Hole	3.5V @ 90µA	9.4 nC @ 10 V	600 V	±20V	200 pF @ 100 V	-	-	PG-TO251-3	-	49W (Tc)	-40°C ~ 150°C (TJ)
BSP92P E6327 MOSFET P-CH 250V 260MA SOT223-4 Infineon Technologies	8,703	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	260mA (Ta)	2.8V, 10V	12Ohm @ 260mA, 10V	Surface Mount	2V @ 130µA	5.4 nC @ 10 V	250 V	±20V	104 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)

共 6460 条记录«上一页 1... 612 613 614 615616617 618 619...646 下一页»