Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 610

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD50P04P413ATMA1 MOSFET P-CH 40V 50A TO252-3 Infineon Technologies	8,987	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	12.6mOhm @ 50A, 10V	Surface Mount	4V @ 85µA	51 nC @ 10 V	40 V	±20V	3670 pF @ 25 V	-	-	PG-TO252-3-313	-	58W (Tc)	-55°C ~ 175°C (TJ)
IPD60R380P6BTMA1 MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies	6,443	-	询价单	数据表	CoolMOS™ P6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	Surface Mount	4.5V @ 320µA	19 nC @ 10 V	600 V	±20V	877 pF @ 100 V	-	-	PG-TO252-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IRF7780MTRPBF MOSFET N-CH 75V 89A DIRECTFET Infineon Technologies	3,669	-	询价单	数据表	StrongIRFET™	DirectFET™ Isometric ME	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	89A (Tc)	6V, 10V	5.7mOhm @ 53A, 10V	Surface Mount	3.7V @ 150µA	186 nC @ 10 V	75 V	±20V	6504 pF @ 25 V	-	-	DirectFET™ Isometric ME	-	96W (Tc)	-55°C ~ 150°C (TJ)
IRL40B209 MOSFET N-CH 40V 195A TO220AB Infineon Technologies	7,716	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	1.25mOhm @ 100A, 10V	Through Hole	2.4V @ 250µA	270 nC @ 4.5 V	40 V	±20V	15140 pF @ 25 V	-	-	TO-220AB	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRL40B212 MOSFET N-CH 40V 195A TO220AB Infineon Technologies	9,572	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	1.9mOhm @ 100A, 10V	Through Hole	2.4V @ 150µA	137 nC @ 4.5 V	40 V	±20V	8320 pF @ 25 V	-	-	TO-220AB	-	231W (Tc)	-55°C ~ 175°C (TJ)
IRL40S212 MOSFET N-CH 40V 195A D2PAK Infineon Technologies	6,715	-	询价单	数据表	StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	1.9mOhm @ 100A, 10V	Surface Mount	2.4V @ 150µA	137 nC @ 4.5 V	40 V	±20V	8320 pF @ 25 V	-	-	PG-TO263-3	-	231W (Tc)	-55°C ~ 175°C (TJ)
IRL60B216 MOSFET N-CH 60V 195A TO220AB Infineon Technologies	2,857	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	1.9mOhm @ 100A, 10V	Through Hole	2.4V @ 250µA	258 nC @ 4.5 V	60 V	±20V	15570 pF @ 25 V	-	-	TO-220AB	-	375W (Tc)	-55°C ~ 175°C (TJ)
IPD60R520CPATMA1 MOSFET N-CH 600V 6.8A TO252-3 Infineon Technologies	4,253	-	询价单	数据表	CoolMOS™ CP	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	520mOhm @ 3.8A, 10V	Surface Mount	3.5V @ 250µA	31 nC @ 10 V	600 V	±20V	630 pF @ 100 V	-	-	PG-TO252-3	-	66W (Tc)	-55°C ~ 150°C (TJ)
IPD60R600CPATMA1 MOSFET N-CH 600V 6.1A TO252-3 Infineon Technologies	8,860	-	询价单	数据表	CoolMOS™ CP	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.1A (Tc)	10V	600mOhm @ 3.3A, 10V	Surface Mount	3.5V @ 220µA	27 nC @ 10 V	600 V	±20V	550 pF @ 100 V	-	-	PG-TO252-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IPP052NE7N3GHKSA1 MOSFET N-CH 75V 80A TO220-3 Infineon Technologies	5,541	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.2mOhm @ 80A, 10V	Through Hole	3.8V @ 91µA	68 nC @ 10 V	75 V	±20V	4750 pF @ 37.5 V	-	-	PG-TO220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)

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