Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 611

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPC028N03L3X1SA1 MOSFET N-CH 30V 2A SAWN ON FOIL Infineon Technologies	9,101	-	询价单	数据表	OptiMOS™ 3	Die	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	-	10V	50mOhm @ 2A, 10V	Surface Mount	2.2V @ 250µA	-	30 V	-	-	-	-	Sawn on foil	-	-	-
BSS159NL6906HTSA1 MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies	9,841	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	230mA (Ta)	0V, 10V	3.5Ohm @ 160mA, 10V	Surface Mount	2.4V @ 26µA	2.9 nC @ 5 V	60 V	±20V	44 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IPB60R230P6ATMA1 MOSFET N-CH 600V 16.8A TO263-3 Infineon Technologies	9,015	-	询价单	数据表	CoolMOS™ P6	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16.8A (Tc)	10V	230mOhm @ 6.4A, 10V	Surface Mount	4.5V @ 530µA	31 nC @ 10 V	600 V	±20V	1450 pF @ 100 V	-	-	PG-TO263-3-1	-	126W (Tc)	-55°C ~ 150°C (TJ)
IPP039N04LGHKSA1 MOSFET N-CH 40V 80A TO220-3 Infineon Technologies	6,076	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.9mOhm @ 80A, 10V	Through Hole	2V @ 45µA	78 nC @ 10 V	40 V	±20V	6100 pF @ 25 V	-	-	PG-TO220-3	-	94W (Tc)	-55°C ~ 175°C (TJ)
IPP50R299CPHKSA1 MOSFET N-CH 550V 12A TO220-3 Infineon Technologies	4,381	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	299mOhm @ 6.6A, 10V	Through Hole	3.5V @ 440µA	31 nC @ 10 V	550 V	±20V	1190 pF @ 100 V	-	-	PG-TO220-3-1	-	104W (Tc)	-55°C ~ 150°C (TJ)
AUIRF7739L2 MOSFET N-CH 40V 46A DIRECTFET Infineon Technologies	6,099	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Ta), 270A (Tc)	10V	1mOhm @ 160A, 10V	Surface Mount	4V @ 250µA	330 nC @ 10 V	40 V	±20V	11880 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	3.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
AUXFN8403TR MOSFET N-CH 40V 95A 8PQFN Infineon Technologies	7,010	-	询价单	数据表	HEXFET®	8-TQFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	95A (Tc)	10V	3.3mOhm @ 50A, 10V	Surface Mount	3.9V @ 100µA	98 nC @ 10 V	40 V	±20V	3174 pF @ 25 V	-	-	8-PQFN (5x6)	-	94W (Tc)	-55°C ~ 175°C (TJ)
IRFH7882TRPBF MOSFET N-CH 80V 26A 8PQFN Infineon Technologies	6,751	-	询价单	数据表	FASTIRFET™	8-VQFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Ta)	10V	3.1mOhm @ 50A, 10V	Surface Mount	3.6V @ 250µA	74 nC @ 10 V	80 V	±20V	3186 pF @ 40 V	-	-	8-PQFN (5x6)	-	4W (Ta), 195W (Tc)	-55°C ~ 150°C (TJ)
IPD090N03LGBTMA1 MOSFET N-CH 30V 40A TO252-3 Infineon Technologies	5,583	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	9mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	15 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TO252-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPI030N10N3GXKSA1 MOSFET N-CH 100V 100A TO262-3 Infineon Technologies	5,932	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3mOhm @ 100A, 10V	Through Hole	3.5V @ 275µA	206 nC @ 10 V	100 V	±20V	14800 pF @ 50 V	-	-	PG-TO262-3	-	300W (Tc)	-55°C ~ 175°C (TJ)

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