Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 606

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR7540TRLPBF MOSFET N-CH 60V 90A DPAK Infineon Technologies	4,767	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	6V, 10V	4.8mOhm @ 66A, 10V	Surface Mount	3.7V @ 100µA	130 nC @ 10 V	60 V	±20V	4360 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
AUIRLZ24NS MOSFET N-CH 55V 18A D2PAK Infineon Technologies	9,006	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Surface Mount	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
IPN70R2K1CEATMA1 MOSFET N-CHANNEL 700V 4A SOT223 Infineon Technologies	4,763	-	询价单	数据表	-	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2.1Ohm @ 1A, 10V	Surface Mount	3.5V @ 70µA	7.8 nC @ 10 V	700 V	±20V	163 pF @ 100 V	-	-	PG-SOT223-3	-	5W (Tc)	-40°C ~ 150°C (TJ)
IRF7523D1TRPBF MOSFET N-CH 30V 2.7A MICRO8 Infineon Technologies	5,234	-	询价单	数据表	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.7A (Ta)	4.5V, 10V	130mOhm @ 1.7A, 10V	Surface Mount	1V @ 250µA	12 nC @ 10 V	30 V	±20V	210 pF @ 25 V	-	Schottky Diode (Isolated)	Micro8™	-	1.25W (Ta)	-55°C ~ 150°C (TJ)
IPD50R280CEATMA1 MOSFET N-CH 500V 13A TO252-3 Infineon Technologies	7,270	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	13V	280mOhm @ 4.2A, 13V	Surface Mount	3.5V @ 350µA	32.6 nC @ 10 V	500 V	±20V	773 pF @ 100 V	-	-	PG-TO252-3	-	119W (Tc)	-55°C ~ 150°C (TJ)
IPD50R500CEATMA1 MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies	5,872	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	7.6A (Tc)	13V	500mOhm @ 2.3A, 13V	Surface Mount	3.5V @ 200µA	18.7 nC @ 10 V	500 V	±20V	433 pF @ 100 V	-	-	PG-TO252-3	-	57W (Tc)	-55°C ~ 150°C (TJ)
IPD50R650CEATMA1 MOSFET N-CH 500V 6.1A TO252-3 Infineon Technologies	5,552	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.1A (Tc)	13V	650mOhm @ 1.8A, 13V	Surface Mount	3.5V @ 150µA	15 nC @ 10 V	500 V	±20V	342 pF @ 100 V	-	-	PG-TO252-3	-	69W (Tc)	-55°C ~ 150°C (TJ)
IPD50R800CEATMA1 MOSFET N CH 500V 5A TO252 Infineon Technologies	8,146	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	13V	800mOhm @ 1.5A, 13V	Surface Mount	3.5V @ 130µA	12.4 nC @ 10 V	500 V	±20V	280 pF @ 100 V	-	-	PG-TO252-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IPD50R950CEATMA1 MOSFET N-CH 500V 4.3A TO252-3 Infineon Technologies	6,073	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	13V	950mOhm @ 1.2A, 13V	Surface Mount	3.5V @ 100µA	10.5 nC @ 10 V	500 V	±20V	231 pF @ 100 V	-	-	PG-TO252-3	-	53W (Tc)	-55°C ~ 150°C (TJ)
IPD60R750E6ATMA1 MOSFET N-CH 600V 5.7A TO252-3 Infineon Technologies	3,929	-	询价单	数据表	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	750mOhm @ 2A, 10V	Surface Mount	3.5V @ 170µA	17.2 nC @ 10 V	600 V	±20V	373 pF @ 100 V	-	-	PG-TO252-3	-	48W (Tc)	-55°C ~ 150°C (TJ)

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