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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA60R330P6XKSA1MOSFET N-CH 600V 12A TO220-FP Infineon Technologies |
8,337 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | Through Hole | 4.5V @ 370µA | 22 nC @ 10 V | 600 V | ±20V | 1010 pF @ 100 V | - | - | PG-TO220-FP | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP60R230P6XKSA1MOSFET N-CH 600V 16.8A TO220-3 Infineon Technologies |
4,078 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | Through Hole | 4.5V @ 530µA | 31 nC @ 10 V | 600 V | ±20V | 1450 pF @ 100 V | - | - | PG-TO220-3 | - | 126W (Tc) | -55°C ~ 150°C (TJ) |
|
BSP320S E6433MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies |
5,643 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | Surface Mount | 4V @ 20µA | 12 nC @ 10 V | 60 V | ±20V | 340 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
BSS126L6906HTSA1MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies |
2,808 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | Surface Mount | 2.7V @ 8µA | 2.1 nC @ 5 V | 600 V | ±20V | 28 pF @ 25 V | - | - | PG-SOT23 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
IPSA70R2K0P7SAKMA1MOSFET N-CH 700V 3A TO251-3 Infineon Technologies |
8,101 | - |
|
数据表 |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 2Ohm @ 500mA, 10V | Through Hole | 3.5V @ 30µA | 3.8 nC @ 400 V | 700 V | ±16V | 130 pF @ 400 V | - | - | PG-TO251-3-347 | - | 17.6W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPP60R330P6XKSA1MOSFET N-CH 600V 12A TO220-3 Infineon Technologies |
9,380 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | Through Hole | 4.5V @ 370µA | 22 nC @ 10 V | 600 V | ±20V | 1010 pF @ 100 V | - | - | PG-TO220-3 | - | 93W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP60R380P6XKSA1MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies |
8,665 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | Through Hole | 4.5V @ 320µA | 19 nC @ 10 V | 600 V | ±20V | 877 pF @ 100 V | - | - | PG-TO220-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW60R230P6FKSA1MOSFET N-CH 600V 16.8A TO247-3 Infineon Technologies |
5,188 | - |
|
数据表 |
CoolMOS™ P6 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | Through Hole | 4.5V @ 530µA | 31 nC @ 10 V | 600 V | ±20V | 1450 pF @ 100 V | - | - | PG-TO247-3 | - | 126W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW60R330P6FKSA1MOSFET N-CH 600V 12A TO247-3 Infineon Technologies |
5,946 | - |
|
数据表 |
CoolMOS™ P6 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | Through Hole | 4.5V @ 370µA | 22 nC @ 10 V | 600 V | ±20V | 1010 pF @ 100 V | - | - | PG-TO247-3 | - | 93W (Tc) | -55°C ~ 150°C (TJ) |
|
IPB120P04P4L03ATMA1MOSFET P-CH 40V 120A D2PAK Infineon Technologies |
4,165 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | Surface Mount | 2.2V @ 340µA | 234 nC @ 10 V | 40 V | ±16V | 15000 pF @ 25 V | - | - | PG-TO263-3 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
