Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 608

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD135N03LGXT MOSFET N-CH 30V 30A TO252-3 Infineon Technologies	8,941	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	13.5mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	10 nC @ 10 V	30 V	±20V	1000 pF @ 15 V	-	-	PG-TO252-3	-	31W (Tc)	-55°C ~ 155°C (TJ)
IPD65R950CFDATMA1 MOSFET N-CH 650V 3.9A TO252-3 Infineon Technologies	8,775	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	950mOhm @ 1.5A, 10V	Surface Mount	4.5V @ 200µA	14.1 nC @ 10 V	650 V	±20V	380 pF @ 100 V	-	-	PG-TO252-3	-	36.7W (Tc)	-55°C ~ 150°C (TJ)
IPI80N06S208AKSA2 MOSFET N-CH 55V 80A TO262-3 Infineon Technologies	3,188	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 58A, 10V	Through Hole	4V @ 150µA	96 nC @ 10 V	55 V	±20V	2860 pF @ 25 V	-	-	PG-TO262-3-1	-	215W (Tc)	-55°C ~ 175°C (TJ)
IPP80N04S2H4AKSA2 MOSFET N-CH 40V 80A TO220-3 Infineon Technologies	3,616	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4mOhm @ 80A, 10V	Through Hole	4V @ 250µA	148 nC @ 10 V	40 V	±20V	4400 pF @ 25 V	-	-	PG-TO220-3-1	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPP80N06S208AKSA2 MOSFET N-CH 55V 80A TO220-3 Infineon Technologies	6,518	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8mOhm @ 58A, 10V	Through Hole	4V @ 150µA	96 nC @ 10 V	55 V	±20V	2860 pF @ 25 V	-	-	PG-TO220-3-1	-	215W (Tc)	-55°C ~ 175°C (TJ)
IPP80N06S209AKSA2 MOSFET N-CH 55V 80A TO220-3 Infineon Technologies	3,742	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	9.1mOhm @ 50A, 10V	Through Hole	4V @ 125µA	80 nC @ 10 V	55 V	±20V	2360 pF @ 25 V	-	-	PG-TO220-3-1	-	190W (Tc)	-55°C ~ 175°C (TJ)
IPU60R1K0CEAKMA1 MOSFET N-CH 600V 4.3A TO251-3 Infineon Technologies	5,157	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	-	1Ohm @ 1.5A, 10V	Through Hole	3.5V @ 130µA	13 nC @ 10 V	600 V	-	280 pF @ 100 V	-	-	PG-TO251-3	-	-	-40°C ~ 150°C (TJ)
IPU60R1K5CEAKMA1 MOSFET N-CH 600V 3.1A TO251-3 Infineon Technologies	4,559	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	-	1.5Ohm @ 1.1A, 10V	Through Hole	3.5V @ 90µA	9.4 nC @ 10 V	600 V	-	200 pF @ 100 V	-	-	PG-TO251-3	-	-	-40°C ~ 150°C (TJ)
BSS169L6906HTSA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	2,530	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	170mA (Ta)	0V, 10V	6Ohm @ 170mA, 10V	Surface Mount	1.8V @ 50µA	2.8 nC @ 7 V	100 V	±20V	68 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IRF7603TRPBF MOSFET N-CH 30V 5.6A MICRO8 Infineon Technologies	9,500	-	询价单	数据表	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.6A (Ta)	4.5V, 10V	35mOhm @ 3.7A, 10V	Surface Mount	1V @ 250µA	27 nC @ 10 V	30 V	±20V	520 pF @ 25 V	-	-	Micro8™	-	1.8W (Ta)	-55°C ~ 150°C (TJ)

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