Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 612

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPI037N08N3GXKSA1 MOSFET N-CH 80V 100A TO262-3 Infineon Technologies	7,395	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3.75mOhm @ 100A, 10V	Through Hole	3.5V @ 155µA	117 nC @ 10 V	80 V	±20V	8110 pF @ 40 V	-	-	PG-TO262-3	-	214W (Tc)	-55°C ~ 175°C (TJ)
BSL303SPEH6327XTSA1 MOSFET P-CH 30V 6.3A TSOP-6 Infineon Technologies	7,053	-	询价单	数据表	OptiMOS™	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.3A (Ta)	4.5V, 10V	33mOhm @ 6.3A, 10V	Surface Mount	2V @ 30µA	20.9 nC @ 10 V	30 V	±20V	1401 pF @ 15 V	-	-	PG-TSOP6-6	-	2W (Ta)	-55°C ~ 150°C (TJ)
BSL305SPEH6327XTSA1 MOSFET P-CH 30V 5.3A TSOP-6 Infineon Technologies	8,111	-	询价单	数据表	OptiMOS™	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.3A (Ta)	4.5V, 10V	45mOhm @ 5.3A, 10V	Surface Mount	2V @ 20µA	14 nC @ 10 V	30 V	±20V	939 pF @ 15 V	-	-	PG-TSOP6-6	-	2W (Ta)	-55°C ~ 150°C (TJ)
IPAW60R190CEXKSA1 MOSFET N-CH 600V 26.7A TO220 Infineon Technologies	9,393	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	26.7A (Tc)	10V	190mOhm @ 9.5A, 10V	Through Hole	3.5V @ 630µA	63 nC @ 10 V	600 V	±20V	1400 pF @ 100 V	-	-	PG-TO220-FP	-	34W (Tc)	-40°C ~ 150°C (TJ)
IPD60R650CEBTMA1 MOSFET N-CH 600V 7A TO252-3 Infineon Technologies	4,636	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	650mOhm @ 2.4A, 10V	Surface Mount	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO252-3	-	82W (Tc)	-40°C ~ 150°C (TJ)
IPD70R2K0CEAUMA1 MOSFET N-CH 700V 4A TO252-3 Infineon Technologies	8,998	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	2Ohm @ 1A, 10V	Surface Mount	3.5V @ 70µA	7.8 nC @ 10 V	700 V	±20V	163 pF @ 100 V	-	-	PG-TO252-3	-	42W (Tc)	-40°C ~ 150°C (TJ)
IPD70R600CEAUMA1 MOSFET N-CH 700V 10.5A TO252-3 Infineon Technologies	5,083	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.5A (Tc)	10V	600mOhm @ 1A, 10V	Surface Mount	3.5V @ 210µA	22 nC @ 10 V	700 V	±20V	474 pF @ 100 V	-	-	PG-TO252-3	-	86W (Tc)	-40°C ~ 150°C (TJ)
IPS70R600CEAKMA1 MOSFET N-CH 700V 10.5A TO251-3 Infineon Technologies	4,423	-	询价单	数据表	CoolMOS™	TO-251-3 Stub Leads, IPAK	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	10.5A (Tc)	10V	600mOhm @ 1A, 10V	Through Hole	3.5V @ 210µA	22 nC @ 10 V	700 V	±20V	474 pF @ 100 V	-	-	PG-TO251-3-11	-	86W (Tc)	-40°C ~ 150°C (TJ)
IPU50R2K0CEAKMA1 MOSFET N-CH 500V 2.4A TO251-3 Infineon Technologies	4,866	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	13V	2Ohm @ 600mA, 13V	Through Hole	3.5V @ 50µA	6 nC @ 10 V	500 V	±20V	124 pF @ 100 V	-	-	PG-TO251-3	-	33W (Tc)	-55°C ~ 150°C (TJ)
IPU50R3K0CEAKMA1 MOSFET N-CH 500V 1.7A TO251-3 Infineon Technologies	9,061	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	13V	3Ohm @ 400mA, 13V	Through Hole	3.5V @ 30µA	4.3 nC @ 10 V	500 V	±20V	84 pF @ 100 V	-	-	PG-TO251-3	-	26W (Tc)	-55°C ~ 150°C (TJ)

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