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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPU50R950CEAKMA2

IPU50R950CEAKMA2

MOSFET N-CH 500V 4.3A TO251-3

Infineon Technologies

4,709 -
IPU50R950CEAKMA2

数据表

CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V Through Hole 3.5V @ 100µA 10.5 nC @ 10 V 500 V ±20V 231 pF @ 100 V - - PG-TO251-3 - 53W (Tc) -55°C ~ 150°C (TJ)
IPP50R350CPHKSA1

IPP50R350CPHKSA1

MOSFET N-CH 500V 10A TO220-3

Infineon Technologies

2,363 -
IPP50R350CPHKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 350mOhm @ 5.6A, 10V Through Hole 3.5V @ 370µA 25 nC @ 10 V 500 V ±20V 1020 pF @ 100 V - - PG-TO220-3-1 - 89W (Tc) -55°C ~ 150°C (TJ)
BSS139L6906HTSA1

BSS139L6906HTSA1

MOSFET N-CH 250V 100MA SOT23-3

Infineon Technologies

2,007 -
BSS139L6906HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 100mA (Ta) 0V, 10V 14Ohm @ 0.1mA, 10V Surface Mount 1V @ 56µA 3.5 nC @ 5 V 250 V ±20V 76 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
IRF7524D1PBF

IRF7524D1PBF

MOSFET P-CH 20V 1.7A MICRO8

Infineon Technologies

4,553 -
IRF7524D1PBF

数据表

FETKY™ 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 8.2 nC @ 4.5 V 20 V ±12V 240 pF @ 15 V - Schottky Diode (Isolated) Micro8™ - 1.25W (Ta) -55°C ~ 150°C (TJ)
IRF8252TRPBF-1

IRF8252TRPBF-1

MOSFET N-CH 25V 25A 8SO

Infineon Technologies

2,949 -
IRF8252TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V Surface Mount 2.35V @ 100µA 53 nC @ 4.5 V 25 V ±20V 5305 pF @ 13 V - - PG-DSO-8 - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFH7187TRPBF

IRFH7187TRPBF

MOSFET N-CH 100V 18A/105A 8PQFN

Infineon Technologies

3,797 -
IRFH7187TRPBF

数据表

FASTIRFET™, HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta), 105A (Tc) 10V 6mOhm @ 50A, 10V Surface Mount 3.6V @ 150µA 50 nC @ 10 V 100 V ±20V 2116 pF @ 50 V - - 8-PQFN (5x6) - 3.8W (Ta), 132W (Tc) -55°C ~ 150°C (TJ)
BSD314SPEH6327XTSA1

BSD314SPEH6327XTSA1

MOSFET P-CH 30V 1.5A SOT363-6

Infineon Technologies

6,084 -
BSD314SPEH6327XTSA1

数据表

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4.5V, 10V 140mOhm @ 1.5A, 10V Surface Mount 2V @ 6.3µA 2.9 nC @ 10 V 30 V ±20V 294 pF @ 15 V - - PG-SOT363-6 - 500mW (Ta) -55°C ~ 150°C (TJ)
BSD816SNH6327XTSA1

BSD816SNH6327XTSA1

MOSFET N-CH 20V 1.4A SOT363-6

Infineon Technologies

2,522 -
BSD816SNH6327XTSA1

数据表

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Ta) 1.8V, 2.5V 160mOhm @ 1.4A, 2.5V Surface Mount 950mV @ 3.7µA 0.6 nC @ 2.5 V 20 V ±8V 180 pF @ 10 V - - PG-SOT363-6 - 500mW (Ta) -55°C ~ 150°C (TJ)
BSF035NE2LQXUMA1

BSF035NE2LQXUMA1

MOSFET N-CH 25V 22A/69A 2WDSON

Infineon Technologies

8,357 -
BSF035NE2LQXUMA1

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta), 69A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V Surface Mount 2V @ 250µA 25 nC @ 10 V 25 V ±20V 1862 pF @ 12 V - - MG-WDSON-2, CanPAK M™ - 2.2W (Ta), 28W (Tc) -40°C ~ 150°C (TJ)
BSL372SNH6327XTSA1

BSL372SNH6327XTSA1

MOSFET N-CH 100V 2A TSOP-6

Infineon Technologies

8,220 -
BSL372SNH6327XTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 220mOhm @ 2A, 10V Surface Mount 1.8V @ 218µA 14.3 nC @ 10 V 100 V ±20V 329 pF @ 25 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
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