Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 605

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPA80R1K4CEXKSA1 MOSFET N-CH 800V 2.8A TO220 Infineon Technologies	2,659	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	1.4Ohm @ 2.3A, 10V	Through Hole	3.9V @ 240µA	23 nC @ 10 V	800 V	±20V	570 pF @ 100 V	-	-	PG-TO220-FP	-	31W (Tc)	-40°C ~ 150°C (TJ)
IPA80R460CEXKSA1 MOSFET N-CH 800V 5A TO220 Infineon Technologies	9,983	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	460mOhm @ 7.1A, 10V	Through Hole	3.9V @ 680µA	64 nC @ 10 V	800 V	±20V	1600 pF @ 100 V	-	-	PG-TO220-FP	-	34W (Tc)	-40°C ~ 150°C (TJ)
IPA80R650CEXKSA1 MOSFET N-CH 800V 4.5A TO220 Infineon Technologies	7,936	-	询价单	数据表	CoolMOS™ CE	TO-220-3 Full Pack	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	650mOhm @ 5.1A, 10V	Through Hole	3.9V @ 470µA	45 nC @ 10 V	800 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-FP	-	33W (Tc)	-40°C ~ 150°C (TJ)
IPU60R1K0CEBKMA1 MOSFET N-CH 600V 4.3A TO251 Infineon Technologies	7,731	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	1Ohm @ 1.5A, 10V	Through Hole	3.5V @ 130µA	13 nC @ 10 V	600 V	±20V	280 pF @ 100 V	-	-	TO-251	-	37W (Tc)	-40°C ~ 150°C (TJ)
IPU60R1K5CEBKMA1 MOSFET N-CH 600V 3.1A TO251 Infineon Technologies	4,849	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.5Ohm @ 1.1A, 10V	Through Hole	3.5V @ 90µA	9.4 nC @ 10 V	600 V	±20V	200 pF @ 100 V	-	-	TO-251	-	28W (Tc)	-40°C ~ 150°C (TJ)
IRFHM7194TRPBF MOSFET N-CH 100V 9.3A/34A 8PQFN Infineon Technologies	9,727	-	询价单	数据表	FASTIRFET™, HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.3A (Ta), 34A (Tc)	10V	16.4mOhm @ 20A, 10V	Surface Mount	3.6V @ 50µA	19 nC @ 10 V	100 V	±20V	733 pF @ 50 V	-	-	8-PQFN (3.3x3.3), Power33	-	2.8W (Ta), 37W (Tc)	-55°C ~ 150°C (TJ)
AUIRLZ24NSTRL MOSFET N-CH 55V 18A D2PAK Infineon Technologies	2,227	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Surface Mount	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
IRF3707ZSTRLPBF MOSFET N-CH 30V 59A D2PAK Infineon Technologies	3,955	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	4.5V, 10V	9.5mOhm @ 21A, 10V	Surface Mount	2.25V @ 25µA	15 nC @ 4.5 V	30 V	±20V	1210 pF @ 15 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
IRFH7184TRPBF MOSFET N-CH 100V 20A/128A PQFN Infineon Technologies	3,095	-	询价单	数据表	FASTIRFET™, HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 128A (Tc)	10V	4.8mOhm @ 50A, 10V	Surface Mount	3.6V @ 150µA	54 nC @ 10 V	100 V	±20V	2320 pF @ 50 V	-	-	PQFN (5x6)	-	3.9W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)
IRFH7190TRPBF MOSFET N-CH 100V 15A/82A PQFN Infineon Technologies	9,610	-	询价单	数据表	FASTIRFET™, HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 82A (Tc)	10V	7.5mOhm @ 49A, 10V	Surface Mount	3.6V @ 100µA	39 nC @ 10 V	100 V	±20V	1685 pF @ 50 V	-	-	PQFN (5x6)	-	3.6W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)

共 6460 条记录«上一页 1... 601 602 603 604605606 607 608...646 下一页»