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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFH7194TRPBF

IRFH7194TRPBF

MOSFET N-CH 100V 11A/35A 8PQFN

Infineon Technologies

9,374 -
IRFH7194TRPBF

数据表

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta), 35A (Tc) 10V 16.4mOhm @ 21A, 10V Surface Mount 3.6V @ 50µA 19 nC @ 10 V 100 V ±20V 733 pF @ 50 V - - 8-PQFN (5x6) - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
IRFI7440GPBF

IRFI7440GPBF

MOSFET N-CH 40V 95A TO220AB FP

Infineon Technologies

7,163 -
IRFI7440GPBF

数据表

HEXFET®, StrongIRFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 2.5mOhm @ 57A, 10V Through Hole 3.9V @ 100µA 132 nC @ 10 V 40 V ±20V 4549 pF @ 25 V - - TO-220AB Full-Pak - 42W (Tc) -55°C ~ 175°C (TJ)
BSL207SP

BSL207SP

MOSFET P-CH 20V 6A TSOP-6

Infineon Technologies

5,661 -
BSL207SP

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Ta) 2.5V, 4.5V 41mOhm @ 6A, 4.5V Surface Mount 1.2V @ 40µA 20 nC @ 4.5 V 20 V ±12V 1007 pF @ 15 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
BSL307SP

BSL307SP

MOSFET P-CH 30V 5.5A TSOP-6

Infineon Technologies

6,587 -
BSL307SP

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V Surface Mount 2V @ 40µA 29 nC @ 10 V 30 V ±20V 805 pF @ 25 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
IRL8114PBF

IRL8114PBF

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies

8,098 -
IRL8114PBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4.5mOhm @ 40A, 10V Through Hole 2.25V @ 250µA 29 nC @ 4.5 V 30 V ±20V 2660 pF @ 15 V - - TO-220AB - 115W (Tc) -55°C ~ 175°C (TJ)
IPA80R1K0CEXKSA1

IPA80R1K0CEXKSA1

MOSFET N-CH 800V 3.6A TO220

Infineon Technologies

7,662 -
IPA80R1K0CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 950mOhm @ 3.6A, 10V Through Hole 3.9V @ 250µA 31 nC @ 10 V 800 V ±20V 785 pF @ 100 V - - PG-TO220-FP - 32W (Tc) -40°C ~ 150°C (TJ)
IPA80R310CEXKSA1

IPA80R310CEXKSA1

MOSFET N-CH 800V 6.8A TO220

Infineon Technologies

6,338 -
IPA80R310CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 6.8A (Tc) - 310mOhm @ 11A, 10V Through Hole 3.9V @ 1mA 91 nC @ 10 V 800 V - 2320 pF @ 100 V - - PG-TO220-FP - 35W (Tc) -40°C ~ 150°C (TJ)
IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251

Infineon Technologies

6,705 -
IPS65R1K5CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 10V 1.5Ohm @ 1A, 10V Through Hole 3.5V @ 100µA 10.5 nC @ 10 V 650 V ±20V 225 pF @ 100 V - - TO-251 - 28W (Tc) -40°C ~ 150°C (TJ)
IPA60R460CEXKSA1

IPA60R460CEXKSA1

MOSFET N-CH 600V 9.1A TO220-FP

Infineon Technologies

4,510 -
IPA60R460CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.1A (Tc) 10V 460mOhm @ 3.4A, 10V Through Hole 3.5V @ 280µA 28 nC @ 10 V 600 V ±20V 620 pF @ 100 V - - PG-TO220-FP - 30W (Tc) -40°C ~ 150°C (TJ)
IPA60R800CEXKSA1

IPA60R800CEXKSA1

MOSFET N-CH 600V 5.6A TO220-FP

Infineon Technologies

8,438 -
IPA60R800CEXKSA1

数据表

CoolMOS™ CE TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Tc) 10V 800mOhm @ 2A, 10V Through Hole 3.5V @ 170µA 17.2 nC @ 10 V 600 V ±20V 373 pF @ 100 V - - PG-TO220-FP - 27W (Tc) -40°C ~ 150°C (TJ)
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