Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 591

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFR540Z MOSFET N-CH 100V 35A DPAK Infineon Technologies	8,032	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	28.5mOhm @ 21A, 10V	Surface Mount	4V @ 50µA	59 nC @ 10 V	100 V	±20V	1690 pF @ 25 V	-	-	DPAK	-	91W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS6535 MOSFET N-CH 300V 19A D2PAK Infineon Technologies	6,598	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	19A (Tc)	10V	185mOhm @ 11A, 10V	Surface Mount	5V @ 150µA	57 nC @ 10 V	300 V	±20V	2340 pF @ 25 V	-	-	PG-TO263-3	-	210W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU3607 MOSFET N CH 75V 56A I-PAK Infineon Technologies	6,893	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	9mOhm @ 46A, 10V	Through Hole	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	IPAK	-	140W (Tc)	-55°C ~ 175°C (TJ)
BSS127 E6327 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	3,677	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.6V @ 8µA	1 nC @ 10 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSS670S2LL6327HTSA1 MOSFET N-CH 55V 540MA SOT23-3 Infineon Technologies	7,374	-	询价单	数据表	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	540mA (Ta)	4.5V, 10V	650mOhm @ 270mA, 10V	Surface Mount	2V @ 2.7µA	2.26 nC @ 10 V	55 V	±20V	75 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS214NL6327HTSA1 MOSFET N-CH 20V 1.5A SOT23-3 Infineon Technologies	4,718	-	询价单	数据表	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	Surface Mount	1.2V @ 3.7µA	0.8 nC @ 5 V	20 V	±12V	143 pF @ 10 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSS127L6327HTSA1 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	9,238	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.6V @ 8µA	1 nC @ 10 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSS806NL6327HTSA1 MOSFET N-CH 20V 2.3A SOT23-3 Infineon Technologies	2,643	-	询价单	数据表	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.3A (Ta)	1.8V, 2.5V	57mOhm @ 2.3A, 2.5V	Surface Mount	750mV @ 11µA	1.7 nC @ 2.5 V	20 V	±8V	529 pF @ 10 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
BSS316NL6327HTSA1 MOSFET N-CH 30V 1.4A SOT23-3 Infineon Technologies	8,661	-	询价单	数据表	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	4.5V, 10V	160mOhm @ 1.4A, 10V	Surface Mount	2V @ 3.7µA	0.6 nC @ 5 V	30 V	±20V	94 pF @ 15 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IRF7748L1TRPBF MOSFET N-CH 60V 28A DIRECTFET Infineon Technologies	7,317	-	询价单	数据表	-	DirectFET™ Isometric L6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 148A (Tc)	10V	2.2mOhm @ 89A, 10V	Surface Mount	4V @ 250µA	220 nC @ 10 V	60 V	±20V	8075 pF @ 50 V	-	-	DIRECTFET L6	-	3.3W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)

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