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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFS7437PBF

IRFS7437PBF

MOSFET N CH 40V 195A D2PAK

Infineon Technologies

9,785 -
IRFS7437PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V Surface Mount 3.9V @ 150µA 225 nC @ 10 V 40 V ±20V 7330 pF @ 25 V - - PG-TO263-3 - 230W (Tc) -55°C ~ 175°C (TJ)
IRFS7440PBF

IRFS7440PBF

MOSFET N CH 40V 120A D2PAK

Infineon Technologies

2,095 -
IRFS7440PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 2.5mOhm @ 100A, 10V Surface Mount 3.9V @ 100µA 135 nC @ 10 V 40 V ±20V 4730 pF @ 25 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 175°C (TJ)
IRF7820PBF

IRF7820PBF

MOSFET N CH 200V 3.7A 8-SO

Infineon Technologies

3,118 -
IRF7820PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 3.7A (Ta) 10V 78mOhm @ 2.2A, 10V Surface Mount 5V @ 100µA 44 nC @ 10 V 200 V ±20V 1750 pF @ 100 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
BSS123L7874XT

BSS123L7874XT

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies

4,856 -
BSS123L7874XT

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V Surface Mount 1.8V @ 50µA 2.67 nC @ 10 V 100 V ±20V 69 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
BSS84P-E6327

BSS84P-E6327

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies

9,587 -
BSS84P-E6327

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V Surface Mount 2V @ 20µA 1.5 nC @ 10 V 60 V ±20V 19 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
IRF9383MTR1PBF

IRF9383MTR1PBF

MOSFET P-CH 30V 22A DIRECTFET

Infineon Technologies

7,708 -
IRF9383MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V Surface Mount 2.4V @ 150µA 130 nC @ 10 V 30 V ±20V 7305 pF @ 15 V - - DIRECTFET™ MX - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ)
IRFB4510GPBF

IRFB4510GPBF

MOSFET N CH 100V 62A TO-220AB

Infineon Technologies

3,858 -
IRFB4510GPBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 62A (Tc) 10V 13.5mOhm @ 37A, 10V Through Hole 4V @ 100µA 87 nC @ 10 V 100 V ±20V 3180 pF @ 50 V - - TO-220AB - 140W (Tc) -55°C ~ 175°C (TJ)
BSS84PW

BSS84PW

MOSFET P-CH 60V 150MA SOT323-3

Infineon Technologies

4,583 -
BSS84PW

数据表

SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 150mA (Ta) 4.5V, 10V 8Ohm @ 150mA, 10V Surface Mount 2V @ 20µA 1.5 nC @ 10 V 60 V ±20V 19.1 pF @ 25 V - - PG-SOT323 - 300mW (Ta) -55°C ~ 150°C (TJ)
AUIRF6218STRL

AUIRF6218STRL

MOSFET P-CH 150V 27A D2PAK

Infineon Technologies

9,502 -
AUIRF6218STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 150mOhm @ 16A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 2210 pF @ 25 V - - PG-TO263-3 - 250W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

Infineon Technologies

9,935 -
AUIRFR4292

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Surface Mount 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - DPAK - 100W (Tc) -55°C ~ 175°C (TJ)
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