Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 594

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFHM4226TRPBF MOSFET N CH 25V 28A PQFN Infineon Technologies	8,716	-	询价单	数据表	HEXFET®	8-TQFN Exposed Pad	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta)	4.5V, 10V	2.2mOhm @ 30A, 10V	Surface Mount	2.1V @ 50µA	32 nC @ 10 V	25 V	±20V	2000 pF @ 13 V	-	-	-	-	2.7W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)
IPD60R600P6 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	7,517	-	询价单	数据表	CoolMOS™ P6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Surface Mount	-	12 nC @ 10 V	600 V	±20V	557 pF @ 100 V	-	-	PG-TO252-3	-	63W (Tc)	-55°C ~ 150°C (TJ)
BSS119L6327HTSA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	9,587	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	2.3V @ 50µA	2.5 nC @ 10 V	100 V	±20V	78 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS119L6433HTMA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	5,518	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	2.3V @ 50µA	2.5 nC @ 10 V	100 V	±20V	78 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IPC014N03L3X1SA1 MOSFET N-CH 30V 2A SAWN ON FOIL Infineon Technologies	8,668	-	询价单	数据表	OptiMOS™	Die	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tj)	10V	50mOhm @ 2A, 10V	Surface Mount	2.2V @ 250µA	-	30 V	-	-	-	-	Sawn on foil	-	-	-
BSS119 E6433 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	8,429	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	2.3V @ 50µA	2.5 nC @ 10 V	100 V	±20V	78 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS119 E7796 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	6,388	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	Surface Mount	2.3V @ 50µA	2.5 nC @ 10 V	100 V	±20V	78 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IPA65R099C6XKSA1 MOSFET N-CH 650V 38A TO220 Infineon Technologies	3,585	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 12.8A, 10V	Through Hole	3.5V @ 1.2mA	127 nC @ 10 V	650 V	±20V	2780 pF @ 100 V	-	-	PG-TO220-3-111	-	35W (Tc)	-55°C ~ 150°C (TJ)
IPA65R150CFDXKSA1 MOSFET N-CH 650V 22.4A TO220 Infineon Technologies	9,781	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	22.4A (Tc)	10V	150mOhm @ 9.3A, 10V	Through Hole	4.5V @ 1mA	86 nC @ 10 V	650 V	±20V	2340 pF @ 100 V	-	-	PG-TO220-3-111	-	34.7W (Tc)	-55°C ~ 150°C (TJ)
IPB65R099C6ATMA1 MOSFET N-CH 650V 38A D2PAK Infineon Technologies	4,154	-	询价单	数据表	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 12.8A, 10V	Surface Mount	3.5V @ 1.2mA	127 nC @ 10 V	650 V	±20V	2780 pF @ 100 V	-	-	PG-TO263-3	-	278W (Tc)	-55°C ~ 150°C (TJ)

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