Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 593

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFSL8403 MOSFET N-CH 40V 123A TO262 Infineon Technologies	4,648	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	123A (Tc)	10V	3.3mOhm @ 70A, 10V	Through Hole	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	TO-262	-	99W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8405 MOSFET N-CH 40V 120A D2PAK Infineon Technologies	8,521	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	PG-TO263-3	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8407 MOSFET N-CH 40V 195A D2PAK Infineon Technologies	2,661	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.8mOhm @ 100A, 10V	Surface Mount	4V @ 150µA	225 nC @ 10 V	40 V	±20V	7330 pF @ 25 V	-	-	PG-TO263-3	-	230W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8408 MOSFET N-CH 40V 195A D2PAK Infineon Technologies	9,745	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.6mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	324 nC @ 10 V	40 V	±20V	10820 pF @ 25 V	-	-	D2PAK	-	294W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8408-7P MOSFET N-CH 40V 240A D2PAK Infineon Technologies	6,741	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	10V	1mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	315 nC @ 10 V	40 V	±20V	10250 pF @ 25 V	-	-	PG-TO263-7-900	-	294W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8409 MOSFET N-CH 40V 195A D2PAK Infineon Technologies	2,470	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.2mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	450 nC @ 10 V	40 V	±20V	14240 pF @ 25 V	-	-	PG-TO263-3	-	375W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR8401 MOSFET N-CH 40V 100A DPAK Infineon Technologies	6,127	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	4.25mOhm @ 60A, 10V	Surface Mount	3.9V @ 50µA	63 nC @ 10 V	40 V	±20V	2200 pF @ 25 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU8405 MOSFET N-CH 40V 100A IPAK Infineon Technologies	5,228	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	1.98mOhm @ 90A, 10V	Through Hole	3.9V @ 100µA	155 nC @ 10 V	40 V	±20V	5171 pF @ 25 V	-	-	IPAK	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU8401 MOSFET N-CH 40V 100A IPAK Infineon Technologies	5,759	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	4.25mOhm @ 60A, 10V	Through Hole	3.9V @ 500µA	63 nC @ 10 V	40 V	±20V	2200 pF @ 25 V	-	-	IPAK	-	79W (Tc)	-55°C ~ 175°C (TJ)
IRFH4213TRPBF MOSFET N-CH 25V 41A PQFN Infineon Technologies	3,365	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	41A (Ta)	4.5V, 10V	1.35mOhm @ 50A, 10V	Surface Mount	2.1V @ 100µA	54 nC @ 10 V	25 V	±20V	3420 pF @ 13 V	-	-	PQFN (5x6)	-	3.6W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)

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