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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFZ48NMOSFET N-CH 55V 69A TO220AB Infineon Technologies |
3,172 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 69A (Tc) | 10V | 14mOhm @ 40A, 10V | Through Hole | 4V @ 100µA | 63 nC @ 10 V | 55 V | ±20V | 1900 pF @ 25 V | - | - | TO-220AB | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF7805QTRMOSFET N CH 30V 13A 8-SO Infineon Technologies |
8,053 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | Surface Mount | 3V @ 250µA | 31 nC @ 5 V | 30 V | ±12V | - | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
AUIRFBA1405MOSFET N-CH 55V 95A SUPER-220 Infineon Technologies |
4,752 | - |
|
数据表 |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | Through Hole | 4V @ 250µA | 260 nC @ 10 V | 55 V | ±20V | 5480 pF @ 25 V | - | - | SUPER-220™ (TO-273AA) | - | 330W (Tc) | -40°C ~ 175°C (TJ) |
|
|
AUIRF7805QMOSFET N-CH 30V 13A 8SO Infineon Technologies |
5,601 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | Surface Mount | 3V @ 250µA | 31 nC @ 5 V | 30 V | ±12V | - | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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AUIRFU540ZMOSFET N-CH 100V 35A IPAK Infineon Technologies |
3,749 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | Through Hole | 4V @ 50µA | 59 nC @ 10 V | 100 V | ±20V | 1690 pF @ 25 V | - | - | IPAK | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF7484QTRMOSFET N CH 40V 14A 8-SO Infineon Technologies |
7,942 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | Surface Mount | 2V @ 250µA | 100 nC @ 7 V | 40 V | ±8V | 3520 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
AUIRF7484QMOSFET N CH 40V 14A 8-SO Infineon Technologies |
2,466 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | Surface Mount | 2V @ 250µA | 100 nC @ 7 V | 40 V | ±8V | 3520 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
AUIRF6215SMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
2,501 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | Surface Mount | 4V @ 250µA | 66 nC @ 10 V | 150 V | ±20V | 860 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) |
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AUIRF6218SMOSFET P-CH 150V 27A D2PAK Infineon Technologies |
3,108 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | Surface Mount | 5V @ 250µA | 110 nC @ 10 V | 150 V | ±20V | 2210 pF @ 25 V | - | - | PG-TO263-3 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRLR024ZMOSFET N CH 55V 16A DPAK Infineon Technologies |
6,039 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | Surface Mount | 3V @ 250µA | 9.9 nC @ 5 V | 55 V | ±16V | 380 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
