Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 587

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSS84PL6327HTSA1 MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies	2,586	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	170mA (Ta)	4.5V, 10V	8Ohm @ 170mA, 10V	Surface Mount	2V @ 20µA	1.5 nC @ 10 V	60 V	±20V	19 pF @ 25 V	-	-	PG-SOT23	-	360mW (Ta)	-55°C ~ 150°C (TJ)
BSS138W E6327 MOSFET N-CH 60V 280MA SOT323-3 Infineon Technologies	7,839	-	询价单	数据表	SIPMOS®	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	280mA (Ta)	4.5V, 10V	3.5Ohm @ 220mA, 10V	Surface Mount	1.4V @ 26µA	1.5 nC @ 10 V	60 V	±20V	43 pF @ 25 V	-	-	PG-SOT323	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IPI020N06NAKSA1 MOSFET N-CH 60V 29A/120A TO262 Infineon Technologies	3,416	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 120A (Tc)	6V, 10V	2mOhm @ 100A, 10V	Through Hole	2.8V @ 143µA	106 nC @ 10 V	60 V	±20V	7800 pF @ 30 V	-	-	PG-TO262-3-1	-	3W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)
IPD50R380CEBTMA1 MOSFET N-CH 500V 14.1A TO252-3 Infineon Technologies	6,740	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	14.1A (Tc)	13V	380mOhm @ 3.2A, 13V	Surface Mount	3.5V @ 260µA	24.8 nC @ 10 V	500 V	±20V	584 pF @ 100 V	-	-	PG-TO252-3	-	73W (Tc)	-55°C ~ 150°C (TJ)
IPA50R190CE MOSFET N-CH 500V 18.5A TO220-FP Infineon Technologies	5,456	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18.5A (Tc)	13V	190mOhm @ 6.2A, 13V	Through Hole	3.5V @ 510µA	47.2 nC @ 10 V	500 V	±20V	1137 pF @ 100 V	-	-	PG-TO220-FP	-	32W (Tc)	-55°C ~ 150°C (TJ)
IPW50R190CEFKSA1 MOSFET N-CH 500V 18.5A TO247-3 Infineon Technologies	5,059	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18.5A (Tc)	13V	190mOhm @ 6.2A, 13V	Through Hole	3.5V @ 510µA	47.2 nC @ 10 V	500 V	±20V	1137 pF @ 100 V	-	-	PG-TO247-3-1	-	127W (Tc)	-55°C ~ 150°C (TJ)
IPD50R800CEBTMA1 MOSFET N CH 500V 5A TO252 Infineon Technologies	6,928	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	13V	800mOhm @ 1.5A, 13V	Surface Mount	3.5V @ 130µA	12.4 nC @ 10 V	500 V	±20V	280 pF @ 100 V	-	-	PG-TO252-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
IPD50R650CEBTMA1 MOSFET N-CH 500V 6.1A TO252-3 Infineon Technologies	9,463	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	6.1A (Tc)	13V	650mOhm @ 1.8A, 13V	Surface Mount	3.5V @ 150µA	15 nC @ 10 V	500 V	±20V	342 pF @ 100 V	-	-	PG-TO252-3	-	47W (Tc)	-55°C ~ 150°C (TJ)
IRFS7437-7PPBF MOSFET N-CH 40V 195A D2PAK Infineon Technologies	8,533	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	1.4mOhm @ 100A, 10V	Surface Mount	3.9V @ 150µA	225 nC @ 10 V	40 V	±20V	7437 pF @ 25 V	-	-	D2PAK (7-Lead)	-	231W (Tc)	-55°C ~ 175°C (TJ)
IRFR7440PBF MOSFET N CH 40V 90A DPAK Infineon Technologies	4,277	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	6V, 10V	2.4mOhm @ 90A, 10V	Surface Mount	3.9V @ 100µA	134 nC @ 10 V	40 V	±20V	4610 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)

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