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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRLL024ZMOSFET N-CH 55V 5A SOT223 Infineon Technologies |
2,872 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | Surface Mount | 3V @ 250µA | 11 nC @ 5 V | 55 V | ±16V | 380 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
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AUIRLU024ZMOSFET N-CH 55V 16A IPAK Infineon Technologies |
2,245 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | Through Hole | 3V @ 250µA | 9.9 nC @ 5 V | 55 V | ±16V | 380 pF @ 25 V | - | - | IPAK | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
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AUIRLL2705MOSFET N-CH 55V 5.2A SOT223 Infineon Technologies |
8,607 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | Surface Mount | 2V @ 250µA | 48 nC @ 10 V | 55 V | ±16V | 870 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
AUIRF5210SMOSFET P-CH 100V 38A D2PAK Infineon Technologies |
2,301 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | Surface Mount | 4V @ 250µA | 230 nC @ 10 V | 100 V | ±20V | 2780 pF @ 25 V | - | - | D2PAK | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFB7434GPBFMOSFET N CH 40V 195A TO220AB Infineon Technologies |
7,686 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | Through Hole | 3.9V @ 250µA | 324 nC @ 10 V | 40 V | ±20V | 10820 pF @ 25 V | - | - | TO-220-3 | - | - | - |
|
IRFB7446GPBFMOSFET N CH 40V 120A TO220AB Infineon Technologies |
5,526 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | Through Hole | 3.9V @ 100µA | 93 nC @ 10 V | 40 V | ±20V | 3183 pF @ 25 V | - | - | TO-220AB | - | 99W (Tc) | - |
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AUIRF4905STRLMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
2,575 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | Surface Mount | 4V @ 250µA | 180 nC @ 10 V | 55 V | ±20V | 3500 pF @ 25 V | AEC-Q101 | - | PG-TO263-3 | Automotive | 200W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFU3607-701PBFMOSFET N-CH 75V 56A IPAK Infineon Technologies |
2,294 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | Through Hole | 4V @ 100µA | 84 nC @ 10 V | 75 V | ±20V | 3070 pF @ 50 V | - | - | IPAK (TO-251AA) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFP4332-203PBFMOSFET N-CH 250V 57A TO247AC Infineon Technologies |
9,747 | - |
|
数据表 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | Through Hole | 5V @ 250µA | 150 nC @ 10 V | 250 V | ±30V | 5860 pF @ 25 V | - | - | TO-247AC | - | 360W (Tc) | -40°C ~ 175°C (TJ) |
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|
IRFU3607TRL701PMOSFET N CH 75V 56A IPAK Infineon Technologies |
7,855 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | Through Hole | 4V @ 100µA | 84 nC @ 10 V | 75 V | ±20V | 3070 pF @ 50 V | - | - | IPAK (TO-251AA) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
