| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF3710ZGPBFMOSFET N-CH 100V 59A TO220AB Infineon Technologies |
9,815 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | Through Hole | 4V @ 250mA | 120 nC @ 10 V | 100 V | ±20V | 2900 pF @ 25 V | - | - | TO-220AB | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF4104GPBFMOSFET N CH 40V 75A TO220AB Infineon Technologies |
6,306 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 100 nC @ 10 V | 40 V | ±20V | 3000 pF @ 25 V | - | - | TO-220AB | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IPW50R280CEFKSA1MOSFET N-CH 500V 13A TO247-3 Infineon Technologies |
8,086 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | Through Hole | 3.5V @ 350µA | 32.6 nC @ 10 V | 500 V | ±20V | 773 pF @ 100 V | - | - | PG-TO247-3-1 | - | 92W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD50R950CEBTMA1MOSFET N-CH 500V 4.3A TO252-3 Infineon Technologies |
3,511 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | Surface Mount | 3.5V @ 100µA | 10.5 nC @ 10 V | 500 V | ±20V | 231 pF @ 100 V | - | - | PG-TO252-3-11 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
BSS84P E6433MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
7,972 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | Surface Mount | 2V @ 20µA | 1.5 nC @ 10 V | 60 V | ±20V | 19 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
IPD50R280CEBTMA1MOSFET N-CH 500V 13A TO252-3 Infineon Technologies |
7,299 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | Surface Mount | 3.5V @ 350µA | 32.6 nC @ 10 V | 500 V | ±20V | 773 pF @ 100 V | - | - | PG-TO252-3-11 | - | 92W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP50R500CEXKSA1MOSFET N-CH 500V 7.6A TO220-3 Infineon Technologies |
7,964 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | Through Hole | 3.5V @ 200µA | 18.7 nC @ 10 V | 500 V | ±20V | 433 pF @ 100 V | - | - | PG-TO220-3-1 | - | - | - |
|
IPD50R500CEBTMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
7,920 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | Surface Mount | 3.5V @ 200µA | 18.7 nC @ 10 V | 500 V | ±20V | 433 pF @ 100 V | - | - | PG-TO252-3-11 | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
|
BSD314SPEL6327HTSA1MOSFET P-CH 30V 1.5A SOT363-6 Infineon Technologies |
6,050 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | Surface Mount | 2V @ 6.3µA | 2.9 nC @ 10 V | 30 V | ±20V | 294 pF @ 15 V | - | - | PG-SOT363-PO | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
BSS7728NL6327HTSA1MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
4,371 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2.3V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 56 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |