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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRL2203NMOSFET N-CH 30V 75A TO220AB Infineon Technologies |
6,847 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | Through Hole | 1V @ 250µA | 60 nC @ 4.5 V | 30 V | ±16V | 3290 pF @ 25 V | - | - | TO-220AB | - | 180W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRLL014NMOSFET N-CH 55V 2A SOT-223 Infineon Technologies |
8,304 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | Surface Mount | 2V @ 250µA | 14 nC @ 10 V | 55 V | ±16V | 230 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
AUIRLL024NMOSFET N-CH 55V 3.1A SOT-223 Infineon Technologies |
2,976 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.1A (Ta) | 4V, 10V | 65mOhm @ 3.1A, 10V | Surface Mount | 2V @ 250µA | 15.6 nC @ 5 V | 55 V | ±16V | 510 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
AUIRLR014NMOSFET N-CH 55V 10A DPAK Infineon Technologies |
3,969 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | Surface Mount | 3V @ 250µA | 7.9 nC @ 5 V | 55 V | ±16V | 265 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR120NMOSFET N-CH 100V 10A DPAK Infineon Technologies |
8,918 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 5 V | 100 V | ±16V | 440 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR2908MOSFET N-CH 80V 30A DPAK Infineon Technologies |
6,683 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | Surface Mount | 2.5V @ 250µA | 33 nC @ 4.5 V | 80 V | ±16V | 1890 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 120W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR3105MOSFET N-CH 55V 25A DPAK Infineon Technologies |
4,663 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 5V, 10V | 37mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 20 nC @ 5 V | 55 V | ±16V | 710 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 57W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR3110ZMOSFET N-CH 100V 42A DPAK Infineon Technologies |
9,264 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | Surface Mount | 2.5V @ 100µA | 48 nC @ 4.5 V | 100 V | ±16V | 3980 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR3114ZMOSFET N-CH 40V 42A DPAK Infineon Technologies |
6,335 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | Surface Mount | 2.5V @ 100µA | 56 nC @ 4.5 V | 40 V | ±16V | 3810 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR3636MOSFET N-CH 60V 50A DPAK Infineon Technologies |
9,881 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | Surface Mount | 2.5V @ 100µA | 49 nC @ 4.5 V | 60 V | ±16V | 3779 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
