Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 583

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFS4310Z MOSFET N-CH 100V 120A D2PAK Infineon Technologies	6,067	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	6mOhm @ 75A, 10V	Surface Mount	4V @ 150µA	170 nC @ 10 V	100 V	±20V	6860 pF @ 50 V	-	-	D2PAK	-	250W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS4410Z MOSFET N-CH 100V 97A D2PAK Infineon Technologies	5,090	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	97A (Tc)	10V	9mOhm @ 58A, 10V	Surface Mount	4V @ 150µA	120 nC @ 10 V	100 V	±20V	4820 pF @ 50 V	-	-	PG-TO263-3	-	230W (Tc)	-55°C ~ 175°C (TJ)
BSS138W E6433 MOSFET N-CH 60V 280MA SOT323-3 Infineon Technologies	6,761	-	询价单	数据表	SIPMOS®	SC-70, SOT-323	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	280mA (Ta)	4.5V, 10V	3.5Ohm @ 220mA, 10V	Surface Mount	1.4V @ 26µA	1.5 nC @ 10 V	60 V	±20V	43 pF @ 25 V	-	-	PG-SOT323	-	500mW (Ta)	-55°C ~ 150°C (TJ)
AUIRFU1010Z MOSFET N-CH 55V 91A TO262 Infineon Technologies	5,252	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	-	-	42A (Tc)	-	-	Through Hole	-	-	-	-	-	-	-	TO-262	-	-	-
AUIRFZ24NS MOSFET N-CH 55V 17A DPAK Infineon Technologies	8,988	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	70mOhm @ 10A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	55 V	±20V	370 pF @ 25 V	-	-	TO-252AA (DPAK)	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ34N MOSFET N-CH 55V 29A TO220AB Infineon Technologies	3,184	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 16A, 10V	Through Hole	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-220AB	-	68W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ44N MOSFET N-CH 55V 49A TO220AB Infineon Technologies	2,958	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	17.5mOhm @ 25A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1470 pF @ 25 V	-	-	TO-220AB	-	94W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ44NS MOSFET N-CH 55V 49A D2PAK Infineon Technologies	3,237	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	17.5mOhm @ 25A, 10V	Surface Mount	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1470 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ46NL MOSFET N-CH 55V 39A TO262 Infineon Technologies	5,311	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	39A (Tc)	10V	16.5mOhm @ 28A, 10V	Through Hole	4V @ 250µA	72 nC @ 10 V	55 V	±20V	1696 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)
BSD816SNL6327HTSA1 MOSFET N-CH 20V 1.4A SOT363-6 Infineon Technologies	5,247	-	询价单	数据表	OptiMOS™	6-VSSOP, SC-88, SOT-363	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	1.8V, 2.5V	160mOhm @ 1.4A, 2.5V	Surface Mount	950mV @ 3.7µA	0.6 nC @ 2.5 V	20 V	±8V	180 pF @ 10 V	-	-	PG-SOT363-PO	-	500mW (Ta)	-55°C ~ 150°C (TJ)

共 6460 条记录«上一页 1... 579 580 581 582583584 585 586...646 下一页»