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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IGLR65R200D2XUMA1IGLR65R200D2XUMA1 Infineon Technologies |
6,443 | - |
|
数据表 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 9.2A (Tc) | - | - | Surface Mount | 1.6V @ 710µA | 1.26 nC @ 3 V | 650 V | -10V | 91 pF @ 400 V | - | - | PG-TSON-8-8 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IQDH29NE2LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
5,971 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Ta), 789A (Tc) | 4.5V, 10V | 0.29mOhm @ 50A, 10V | Surface Mount | 2V @ 1.448mA | 110 nC @ 4.5 V | 25 V | ±16V | 17000 pF @ 12 V | - | - | PG-WHTFN-9-U02 | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IQDH29NE2LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
8,526 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Ta), 789A (Tc) | 4.5V, 10V | 0.29mOhm @ 50A, 10V | Surface Mount | 2V @ 1.448mA | 110 nC @ 4.5 V | 25 V | ±16V | 17000 pF @ 12 V | - | - | PG-WHSON-8-U02 | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IQDH35N03LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,499 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 66A (Ta), 700A (Tc) | 4.5V, 10V | 0.35mOhm @ 50A, 10V | Surface Mount | 2V @ 1.46mA | 114 nC @ 4.5 V | 30 V | ±20V | 18000 pF @ 15 V | - | - | PG-WHTFN-9-U02 | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IQDH35N03LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
7,776 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 66A (Ta), 700A (Tc) | 4.5V, 10V | 0.35mOhm @ 50A, 10V | Surface Mount | 2V @ 1.46mA | 114 nC @ 4.5 V | 30 V | ±20V | 18000 pF @ 15 V | - | - | PG-WHSON-8-U02 | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IQDH45N04LM6SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,381 | - |
|
数据表 |
OptiMOS™ 6 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Ta), 611A (Tc) | 4.5V, 10V | 0.49mOhm @ 50A, 10V | Surface Mount | 2.3V @ 1.449mA | 78 nC @ 4.5 V | 40 V | ±20V | 12000 pF @ 20 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQDH45N04LM6CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,577 | - |
|
数据表 |
OptiMOS™ 6 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Ta), 611A (Tc) | 4.5V, 10V | 0.49mOhm @ 50A, 10V | Surface Mount | 2.3V @ 1.449mA | 78 nC @ 4.5 V | 40 V | ±20V | 12000 pF @ 20 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQD005N04NM6CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,743 | - |
|
数据表 |
OptiMOS™ 6 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 57A (Ta), 597A (Tc) | 6V, 10V | 0.49mOhm @ 50A, 10V | Surface Mount | 2.8V @ 1.449mA | 163 nC @ 10 V | 40 V | ±20V | 12000 pF @ 20 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQD005N04NM6SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
8,986 | - |
|
数据表 |
OptiMOS™ 6 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 57A (Ta), 597A (Tc) | 6V, 10V | 0.49mOhm @ 50A, 10V | Surface Mount | 2.8V @ 1.449mA | 163 nC @ 10 V | 40 V | ±20V | 12000 pF @ 20 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQDH88N06LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
7,250 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Ta), 447A (Tc) | 4.5V, 10V | 0.86mOhm @ 50A, 10V | Surface Mount | 2.3V @ 163µA | 95 nC @ 4.5 V | 60 V | ±20V | 14000 pF @ 30 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
