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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP65R660CFDXKSA1MOSFET N-CH 650V 6A TO220-3 Infineon Technologies |
3,033 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | Through Hole | 4.5V @ 200µA | 22 nC @ 10 V | 650 V | ±20V | 615 pF @ 100 V | - | - | PG-TO220-3 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW65R110CFDFKSA1MOSFET N-CH 650V 31.2A TO247-3 Infineon Technologies |
4,642 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 650 V | ±20V | 3240 pF @ 100 V | - | - | PG-TO247-3-1 | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R190C6FKSA1MOSFET N-CH 650V 20.2A TO247-3 Infineon Technologies |
4,110 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 3.5V @ 730µA | 73 nC @ 10 V | 650 V | ±20V | 1620 pF @ 100 V | - | - | PG-TO247-3-1 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R190CFDFKSA1MOSFET N-CH 650V 17.5A TO247-3 Infineon Technologies |
4,623 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 4.5V @ 730µA | 68 nC @ 10 V | 650 V | ±20V | 1850 pF @ 100 V | - | - | PG-TO247-3-1 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R190E6FKSA1MOSFET N-CH 650V 20.2A TO247-3 Infineon Technologies |
8,788 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 3.5V @ 730µA | 73 nC @ 10 V | 650 V | ±20V | 1620 pF @ 100 V | - | - | PG-TO247-3-1 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R310CFDFKSA1MOSFET N-CH 650V 11.4A TO247-3 Infineon Technologies |
4,070 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | Through Hole | 4.5V @ 440µA | 41 nC @ 10 V | 650 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO247-3-1 | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW65R420CFDFKSA1MOSFET N-CH 650V 8.7A TO247-3 Infineon Technologies |
7,987 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | Through Hole | 4.5V @ 340µA | 32 nC @ 10 V | 650 V | ±20V | 870 pF @ 100 V | - | - | PG-TO247-3-1 | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP15P10PHXKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
9,727 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | Through Hole | 2.1V @ 1.54mA | 48 nC @ 10 V | 100 V | ±20V | 1280 pF @ 25 V | - | - | PG-TO220-3 | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF150DM115XTMA1TRENCH >=100V DIRECTFET Infineon Technologies |
5,474 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | 150 V | - | - | - | - | - | - | - | - |
|
|
IGLR65R270D2XUMA1IGLR65R270D2XUMA1 Infineon Technologies |
2,748 | - |
|
数据表 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 7.2A (Tc) | - | - | Surface Mount | 1.6V @ 560µA | 1 nC @ 3 V | 650 V | -10V | 74 pF @ 400 V | - | - | PG-TSON-8-8 | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
