订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPI65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO262-3 Infineon Technologies |
2,162 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | Through Hole | 4.5V @ 340µA | 32 nC @ 10 V | 650 V | ±20V | 870 pF @ 100 V | - | - | PG-TO262-3 | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI65R600C6XKSA1MOSFET N-CH 650V 7.3A TO262-3 Infineon Technologies |
6,560 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | Through Hole | 3.5V @ 210µA | 23 nC @ 10 V | 650 V | ±20V | 440 pF @ 100 V | - | - | PG-TO262-3 | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPI65R660CFDXKSA1MOSFET N-CH 650V 6A TO262-3 Infineon Technologies |
8,317 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | Through Hole | 4.5V @ 200µA | 22 nC @ 10 V | 650 V | ±20V | 615 pF @ 100 V | - | - | PG-TO262-3 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP100N04S4H2AKSA1MOSFET N-CH 40V 100A TO220-3-1 Infineon Technologies |
3,903 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 2.7mOhm @ 100A, 10V | Through Hole | 4V @ 70µA | 90 nC @ 10 V | 40 V | ±20V | 7180 pF @ 25 V | - | - | PG-TO220-3-1 | - | 115W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP120N04S401AKSA1MOSFET N-CH 40V 120A TO220-3-1 Infineon Technologies |
8,563 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 1.9mOhm @ 100A, 10V | Through Hole | 4V @ 140µA | 176 nC @ 10 V | 40 V | ±20V | 14000 pF @ 25 V | - | - | PG-TO220-3-1 | - | 188W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP65R110CFDXKSA1MOSFET N-CH 700V 31.2A TO220-3 Infineon Technologies |
5,109 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 700 V | ±20V | 3240 pF @ 100 V | - | - | PG-TO220-3 | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP65R190CFDXKSA1MOSFET N-CH 650V 17.5A TO220-3 Infineon Technologies |
5,855 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 4.5V @ 730µA | 68 nC @ 10 V | 650 V | ±20V | 1850 pF @ 100 V | - | - | PG-TO220-3 | - | 151W (Tc) | -55°C ~ 150°C (TJ) |
|
IPB029N06N3GE8187ATMA1MOSFET N-CH 60V 120A D2PAK Infineon Technologies |
3,234 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | Surface Mount | 4V @ 118µA | 165 nC @ 10 V | 60 V | ±20V | 13000 pF @ 30 V | - | - | PG-TO263-3 | - | 188W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO220-3 Infineon Technologies |
3,948 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | Through Hole | 4.5V @ 440µA | 41 nC @ 10 V | 650 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO220-3 | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP65R380C6XKSA1MOSFET N-CH 650V 10.6A TO220-3 Infineon Technologies |
8,175 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | Through Hole | 3.5V @ 320µA | 39 nC @ 10 V | 650 V | ±20V | 710 pF @ 100 V | - | - | PG-TO220-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
