Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 570

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6894MTR1PBF MOSFET N-CH 25V 32A DIRECTFET Infineon Technologies	3,296	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	32A (Ta), 160A (Tc)	4.5V, 10V	1.3mOhm @ 33A, 10V	Surface Mount	2.1V @ 100µA	39 nC @ 4.5 V	25 V	±16V	4160 pF @ 13 V	-	Schottky Diode (Body)	DIRECTFET™ MX	-	2.1W (Ta), 54W (Tc)	-40°C ~ 150°C (TJ)
IRF6898MTR1PBF MOSFET N-CH 25V 35A DIRECTFET Infineon Technologies	7,913	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 213A (Tc)	4.5V, 10V	1.1mOhm @ 35A, 10V	Surface Mount	2.1V @ 100µA	62 nC @ 4.5 V	25 V	±16V	5435 pF @ 13 V	-	Schottky Diode (Body)	DIRECTFET™ MX	-	2.1W (Ta), 78W (Tc)	-40°C ~ 150°C (TJ)
IRFB812PBF MOSFET N CH 500V 3.6A TO220AB Infineon Technologies	3,680	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	Through Hole	5V @ 250µA	20 nC @ 10 V	500 V	±20V	810 pF @ 25 V	-	-	TO-220AB	-	78W (Tc)	-55°C ~ 150°C (TJ)
IRFI4410ZGPBF MOSFET N-CH 100V 43A TO220AB FP Infineon Technologies	8,662	-	询价单	数据表	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	10V	9.3mOhm @ 26A, 10V	Through Hole	4V @ 150µA	110 nC @ 10 V	100 V	±30V	4910 pF @ 50 V	-	-	TO-220AB Full-Pak	-	47W (Tc)	-55°C ~ 175°C (TJ)
AUIRF7799L2TR MOSFET N-CH 250V 375A DIRECTFET Infineon Technologies	6,719	-	询价单	数据表	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	375A (Tc)	10V	38mOhm @ 21A, 10V	Surface Mount	5V @ 250µA	165 nC @ 10 V	250 V	±30V	6714 pF @ 25 V	-	-	DirectFET™ Isometric L8	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,236	-	询价单	数据表	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	Surface Mount	5.6V @ 4.6mA	28 nC @ 18 V	650 V	+23V, -7V	997 pF @ 400 V	-	-	PG-TO263-7-12	-	197W (Tc)	-55°C ~ 175°C (TJ)
IPQC60R040S7XTMA1 MOSFET Infineon Technologies	6,559	-	询价单	数据表	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	12V	40mOhm @ 13A, 12V	Surface Mount	4.5V @ 790µA	83 nC @ 12 V	600 V	±20V	-	-	-	PG-HDSOP-22	-	272W (Tc)	-55°C ~ 150°C (TJ)
IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies	2,932	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	32.8A (Tc)	15V, 20V	55mOhm @ 15.4A, 20V	Through Hole	5.6V @ 3.1mA	19 nC @ 18 V	650 V	+23V, -7V	669 pF @ 400 V	-	-	PG-TO247-3-40	-	130W (Tc)	-55°C ~ 175°C (TJ)
IPZA60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-4-3 Infineon Technologies	8,983	-	询价单	数据表	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V	45mOhm @ 22.5A, 10V	Through Hole	4V @ 1.08mA	90 nC @ 10 V	650 V	±20V	3891 pF @ 400 V	-	-	PG-TO247-4-3	-	201W (Tc)	-55°C ~ 150°C (TJ)
GS61008P-MR GS61008P-MR Infineon Technologies Canada Inc.	3,880	-	询价单	数据表	-	5-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	90A (Tc)	6V	9.5mOhm @ 27A, 6V	Surface Mount	2.6V @ 7mA	8 nC @ 6 V	100 V	+7V, -10V	600 pF @ 50 V	-	-	-	-	-	-55°C ~ 150°C

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