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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IQD016N08NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
8,445 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 133 nC @ 10 V | 80 V | ±20V | 9200 pF @ 40 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQD016N08NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
7,583 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 133 nC @ 10 V | 80 V | ±20V | 9200 pF @ 40 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQD063N15NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,039 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14.4A (Ta), 151A (Tc) | 8V, 10V | 6.32mOhm @ 50A, 10V | Surface Mount | 4.6V @ 159µA | 60 nC @ 10 V | 150 V | ±20V | 4700 pF @ 75 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP023N10N5AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
4,142 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | Through Hole | 3.8V @ 270µA | 210 nC @ 10 V | 100 V | ±20V | 15600 pF @ 50 V | - | - | PG-TO220-3 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQFH47N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
8,789 | - |
|
数据表 |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Ta), 507A (Tc) | 6V, 10V | 0.47mOhm @ 100A, 10V | Surface Mount | 2.8V @ 1.05mA | 221 nC @ 10 V | 40 V | ±20V | 13300 pF @ 20 V | - | - | PG-TSON-12-1 | - | 3W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP051N15N5AKSA1MOSFET N-CH 150V 120A TO220-3 Infineon Technologies |
2,758 | - |
|
数据表 |
OptiMOS™ 5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | Through Hole | 4.6V @ 264µA | 100 nC @ 10 V | 150 V | ±20V | 7800 pF @ 75 V | - | - | PG-TO220-3 | - | 300mW (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQFH39N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
2,674 | - |
|
数据表 |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 63A (Ta), 600A (Tc) | 6V, 10V | 0.39mOhm @ 100A, 10V | Surface Mount | 2.8V @ 1.05mA | 273 nC @ 10 V | 40 V | ±20V | 16400 pF @ 20 V | - | - | PG-TSON-12-1 | - | 3W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IGLT65R110D2ATMA1IGLT65R110D2ATMA1 Infineon Technologies |
7,608 | - |
|
数据表 |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 15A (Tc) | - | - | Surface Mount | 1.6V @ 1.3mA | 2.4 nC @ 3 V | 650 V | -10V | 170 pF @ 400 V | - | - | PG-HDSOP-16-8 | - | 55W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP022N12NM6AKSA1TRENCH >=100V Infineon Technologies |
9,464 | - |
|
数据表 |
OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Ta), 203A (Tc) | 8V, 10V | 2.2mOhm @ 100A, 10V | Through Hole | 3.6V @ 275µA | 141 nC @ 10 V | 120 V | ±20V | 11000 pF @ 60 V | - | - | PG-TO220-3-1 | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF6811STR1PBFMOSFET N CH 25V 19A DIRECTFET Infineon Technologies |
4,855 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | Surface Mount | 2.1V @ 35µA | 17 nC @ 4.5 V | 25 V | ±16V | 1590 pF @ 13 V | - | - | DIRECTFET™ SQ | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) |
