| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IGLR65R140D2XUMA1IGLR65R140D2XUMA1 Infineon Technologies |
3,809 | - |
|
数据表 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 13A (Tc) | - | - | Surface Mount | 1.6V @ 1mA | 1.8 nC @ 3 V | 650 V | -10V | 155 pF @ 400 V | - | - | PG-TSON-8-8 | - | 47W (Tc) | -55°C ~ 150°C (TJ) |
|
IQDH88N06LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,110 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Ta), 447A (Tc) | 4.5V, 10V | 0.86mOhm @ 50A, 10V | Surface Mount | 2.3V @ 163µA | 95 nC @ 4.5 V | 60 V | ±20V | 14000 pF @ 30 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IQFH55N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
5,124 | - |
|
数据表 |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 53A (Ta), 451A (Tc) | 6V, 10V | 0.55mOhm @ 100A, 10V | Surface Mount | 2.8V @ 1.05mA | 177 nC @ 10 V | 40 V | ±20V | 11000 pF @ 20 V | - | - | PG-TSON-12-1 | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) |
|
IQD009N06NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
9,291 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | Surface Mount | 3.3V @ 163µA | 150 nC @ 10 V | 60 V | ±20V | 12000 pF @ 30 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP030N10N5AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
5,081 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | Through Hole | 3.8V @ 184µA | 139 nC @ 10 V | 100 V | ±20V | 10300 pF @ 50 V | - | - | PG-TO220-3 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IQD020N10NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
8,430 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 276A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 134 nC @ 10 V | 100 V | ±20V | 9500 pF @ 50 V | - | - | PG-WHSON-8-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IQD020N10NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
5,547 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 276A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | Surface Mount | 3.8V @ 159µA | 134 nC @ 10 V | 100 V | ±20V | 9500 pF @ 50 V | - | - | PG-WHTFN-9-U02 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF6898MTRPBFMOSFET N-CH 25V 35A DIRECTFET Infineon Technologies |
6,585 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | Surface Mount | 2.1V @ 100µA | 62 nC @ 4.5 V | 25 V | ±16V | 5435 pF @ 13 V | - | Schottky Diode (Body) | DIRECTFET™ MX | - | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF6894MTRPBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
5,670 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | Surface Mount | 2.1V @ 100µA | 39 nC @ 4.5 V | 25 V | ±16V | 4160 pF @ 13 V | - | Schottky Diode (Body) | DIRECTFET™ MX | - | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF6811STRPBFMOSFET N CH 25V 19A DIRECTFET Infineon Technologies |
6,596 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | Surface Mount | 2.1V @ 35µA | 17 nC @ 4.5 V | 25 V | ±16V | 1590 pF @ 13 V | - | - | DIRECTFET™ SQ | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) |