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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IGLR65R140D2XUMA1

IGLR65R140D2XUMA1

IGLR65R140D2XUMA1

Infineon Technologies

3,809 -
IGLR65R140D2XUMA1

数据表

CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 13A (Tc) - - Surface Mount 1.6V @ 1mA 1.8 nC @ 3 V 650 V -10V 155 pF @ 400 V - - PG-TSON-8-8 - 47W (Tc) -55°C ~ 150°C (TJ)
IQDH88N06LM5SCATMA1

IQDH88N06LM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

2,110 -
IQDH88N06LM5SCATMA1

数据表

OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Ta), 447A (Tc) 4.5V, 10V 0.86mOhm @ 50A, 10V Surface Mount 2.3V @ 163µA 95 nC @ 4.5 V 60 V ±20V 14000 pF @ 30 V - - PG-WHSON-8-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IQFH55N04NM6ATMA1

IQFH55N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

5,124 -
IQFH55N04NM6ATMA1

数据表

OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53A (Ta), 451A (Tc) 6V, 10V 0.55mOhm @ 100A, 10V Surface Mount 2.8V @ 1.05mA 177 nC @ 10 V 40 V ±20V 11000 pF @ 20 V - - PG-TSON-12-1 - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ)
IQD009N06NM5CGSCATMA1

IQD009N06NM5CGSCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

9,291 -
IQD009N06NM5CGSCATMA1

数据表

OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V Surface Mount 3.3V @ 163µA 150 nC @ 10 V 60 V ±20V 12000 pF @ 30 V - - PG-WHTFN-9-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IPP030N10N5AKSA1

IPP030N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies

5,081 -
IPP030N10N5AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 6V, 10V 3mOhm @ 100A, 10V Through Hole 3.8V @ 184µA 139 nC @ 10 V 100 V ±20V 10300 pF @ 50 V - - PG-TO220-3 - 250W (Tc) -55°C ~ 175°C (TJ)
IQD020N10NM5SCATMA1

IQD020N10NM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

8,430 -
IQD020N10NM5SCATMA1

数据表

OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 276A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V Surface Mount 3.8V @ 159µA 134 nC @ 10 V 100 V ±20V 9500 pF @ 50 V - - PG-WHSON-8-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IQD020N10NM5CGSCATMA1

IQD020N10NM5CGSCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

5,547 -
IQD020N10NM5CGSCATMA1

数据表

OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Ta), 276A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V Surface Mount 3.8V @ 159µA 134 nC @ 10 V 100 V ±20V 9500 pF @ 50 V - - PG-WHTFN-9-U02 - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
IRF6898MTRPBF

IRF6898MTRPBF

MOSFET N-CH 25V 35A DIRECTFET

Infineon Technologies

6,585 -
IRF6898MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Ta), 213A (Tc) 4.5V, 10V 1.1mOhm @ 35A, 10V Surface Mount 2.1V @ 100µA 62 nC @ 4.5 V 25 V ±16V 5435 pF @ 13 V - Schottky Diode (Body) DIRECTFET™ MX - 2.1W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
IRF6894MTRPBF

IRF6894MTRPBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies

5,670 -
IRF6894MTRPBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V Surface Mount 2.1V @ 100µA 39 nC @ 4.5 V 25 V ±16V 4160 pF @ 13 V - Schottky Diode (Body) DIRECTFET™ MX - 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ)
IRF6811STRPBF

IRF6811STRPBF

MOSFET N CH 25V 19A DIRECTFET

Infineon Technologies

6,596 -
IRF6811STRPBF

数据表

HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta), 74A (Tc) 4.5V, 10V 3.7mOhm @ 19A, 10V Surface Mount 2.1V @ 35µA 17 nC @ 4.5 V 25 V ±16V 1590 pF @ 13 V - - DIRECTFET™ SQ - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ)
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