Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 49

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSC032N03S MOSFET N-CH 30V 23A/100A TDSON Infineon Technologies	3,469	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 100A (Tc)	4.5V, 10V	3.2mOhm @ 50A, 10V	Surface Mount	2V @ 70µA	39 nC @ 5 V	30 V	±20V	5080 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)
IPD35N10S3L26ATMA2 MOSFET_(75V 120V( Infineon Technologies	6,168	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	24mOhm @ 35A, 10V	Surface Mount	2.4V @ 39µA	39 nC @ 10 V	100 V	±20V	2700 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	71W (Tc)	-55°C ~ 175°C (TJ)
BSB104N08NP3GXUMA1 TRENCH 40<-<100V Infineon Technologies	3,861	-	询价单	数据表	-	DirectFET™ Isometric MP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	Surface Mount	3.5V @ 40µA	31 nC @ 10 V	80 V	±20V	2100 pF @ 40 V	-	-	MG-WDSON-2-6	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IPP039N04LGXKSA1 MOSFET N-CH 40V 80A TO220-3 Infineon Technologies	9,954	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.9mOhm @ 80A, 10V	Through Hole	2V @ 45µA	78 nC @ 10 V	40 V	±20V	6100 pF @ 25 V	-	-	PG-TO220-3-1	-	94W (Tc)	-55°C ~ 175°C (TJ)
BSB104N08NP3GXUMA2 TRENCH 40<-<100V Infineon Technologies	4,191	-	询价单	数据表	-	DirectFET™ Isometric MP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	Surface Mount	3.5V @ 40µA	31 nC @ 10 V	80 V	±20V	2100 pF @ 40 V	-	-	MG-WDSON-2-6	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRFR3418TRLPBF MOSFET N-CH 80V 70A DPAK Infineon Technologies	5,150	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	14mOhm @ 18A, 10V	Surface Mount	5.5V @ 250µA	94 nC @ 10 V	80 V	±20V	3510 pF @ 25 V	-	-	TO-252AA (DPAK)	-	3.8W (Ta), 140W (Tc)	-55°C ~ 175°C (TJ)
IRF7433TR MOSFET P-CH 12V 8.9A 8SO Infineon Technologies	3,034	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	8.9A (Ta)	1.8V, 4.5V	24mOhm @ 8.7A, 4.5V	Surface Mount	900mV @ 250µA	20 nC @ 4.5 V	12 V	±8V	1877 pF @ 10 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
BSC090N03MSGATMA1 MOSFET N-CH 30V 12A/48A 8TDSON Infineon Technologies	2,027	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 48A (Tc)	4.5V, 10V	9mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	24 nC @ 10 V	30 V	±20V	1900 pF @ 15 V	-	-	PG-TDSON-8-5	-	2.5W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)
BSO130N03MSGXUMA1 MOSFET N-CH 30V 9A 8DSO Infineon Technologies	9,419	-	询价单	数据表	OptiMOS™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	13mOhm @ 11.1A, 10V	Surface Mount	2V @ 250µA	17 nC @ 10 V	30 V	±20V	1300 pF @ 15 V	-	-	PG-DSO-8	-	1.56W (Ta)	-55°C ~ 150°C (TJ)
IRFHS8342TR2PBF MOSFET N-CH 30V 8.8A PQFN Infineon Technologies	7,820	-	询价单	数据表	-	6-PowerVDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.8A (Ta), 19A (Tc)	-	16mOhm @ 8.5A, 10V	Surface Mount	2.35V @ 25µA	8.7 nC @ 10 V	30 V	-	600 pF @ 25 V	-	-	PG-TSDSON-6	-	-	-

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