Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 48

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRFU4292 MOSFET N CH 250V 9.3A IPAK Infineon Technologies	3,256	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.3A (Tc)	10V	345mOhm @ 5.6A, 10V	Through Hole	5V @ 50µA	20 nC @ 10 V	250 V	±20V	705 pF @ 25 V	-	-	IPAK	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPA50R950CE MOSFET N-CH 500V 4.3A TO220-FP Infineon Technologies	8,390	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	13V	950mOhm @ 1.2A, 13V	Through Hole	3.5V @ 100µA	10.5 nC @ 10 V	500 V	±20V	231 pF @ 100 V	-	-	PG-TO220-3-31	-	25.7W (Tc)	-40°C ~ 150°C (TJ)
IRLR7811WCPBF MOSFET N-CH 30V 64A DPAK Infineon Technologies	8,668	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	4.5V, 10V	10.5mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	31 nC @ 4.5 V	30 V	±12V	2260 pF @ 15 V	-	-	TO-252AA (DPAK)	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPD640N06LGBTMA1 MOSFET N-CH 60V 18A TO252-3 Infineon Technologies	5,547	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	64mOhm @ 18A, 10V	Surface Mount	2V @ 16µA	13 nC @ 10 V	60 V	±20V	470 pF @ 30 V	-	-	PG-TO252-3	-	47W (Tc)	-55°C ~ 175°C (TJ)
IPP026N04NF2SAKMA1 TRENCH PG-TO220-3 Infineon Technologies	7,493	-	询价单	数据表	StrongIRFET™2	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Ta), 121A (Tc)	6V, 10V	2.6mOhm @ 70A, 10V	Through Hole	3.4V @ 81µA	102 nC @ 10 V	40 V	±20V	4800 pF @ 20 V	-	-	PG-TO220-3-U05	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IPD16CN10N G MOSFET N-CH 100V 53A TO252-3 Infineon Technologies	3,582	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	16mOhm @ 53A, 10V	Surface Mount	4V @ 61µA	48 nC @ 10 V	100 V	±20V	3220 pF @ 50 V	-	-	PG-TO252-3	-	100W (Tc)	-55°C ~ 175°C (TJ)
IRFR220NTR MOSFET N-CH 200V 5A DPAK Infineon Technologies	5,174	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	600mOhm @ 2.9A, 10V	Surface Mount	4V @ 250µA	23 nC @ 10 V	200 V	±20V	300 pF @ 25 V	-	-	TO-252AA (DPAK)	-	43W (Tc)	-55°C ~ 175°C (TJ)
IAUCN04S7N030ATMA1 MOSFET_(20V 40V) Infineon Technologies	5,025	-	询价单	数据表	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A	10V	-	Surface Mount	-	-	40 V	-	-	AEC-Q101	-	PG-TDSON-8-33	Automotive	-	-55°C ~ 100°C
IRLR4343-701PBF MOSFET N-CH 55V 26A IPAK Infineon Technologies	7,088	-	询价单	数据表	HEXFET®	TO-252-4, DPAK (3 Leads + Tab)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	50mOhm @ 4.7A, 10V	Surface Mount	1V @ 250µA	42 nC @ 10 V	55 V	±20V	740 pF @ 50 V	-	-	I-PAK (LF701)	-	79W (Tc)	-40°C ~ 175°C (TJ)
IPD35N12S3L24ATMA2 MOSFET_(120V 300V) Infineon Technologies	9,169	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	24mOhm @ 35A, 10V	Surface Mount	2.4V @ 39µA	39 nC @ 10 V	120 V	±20V	2691 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	71W (Tc)	-55°C ~ 175°C (TJ)

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