Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 511

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD096N08N3GBTMA1 MOSFET N-CH 80V 73A TO252-3 Infineon Technologies	2,488	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	73A (Tc)	6V, 10V	9.6mOhm @ 46A, 10V	Surface Mount	3.5V @ 46µA	35 nC @ 10 V	80 V	±20V	2410 pF @ 40 V	-	-	PG-TO252-3	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPD105N04LGBTMA1 MOSFET N-CH 40V 40A TO252-3 Infineon Technologies	2,992	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	10.5mOhm @ 40A, 10V	Surface Mount	2V @ 14µA	23 nC @ 10 V	40 V	±20V	1900 pF @ 20 V	-	-	PG-TO252-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPD12CN10NGBUMA1 MOSFET N-CH 100V 67A TO252-3 Infineon Technologies	5,497	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	12.4mOhm @ 67A, 10V	Surface Mount	4V @ 83µA	65 nC @ 10 V	100 V	±20V	4320 pF @ 50 V	-	-	PG-TO252-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPD135N08N3GBTMA1 MOSFET N-CH 80V 45A TO252-3 Infineon Technologies	8,508	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	6V, 10V	13.5mOhm @ 45A, 10V	Surface Mount	3.5V @ 33µA	25 nC @ 10 V	80 V	±20V	1730 pF @ 40 V	-	-	PG-TO252-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPD14N06S280ATMA1 MOSFET N-CH 55V 17A TO252-3 Infineon Technologies	8,053	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	10V	80mOhm @ 7A, 10V	Surface Mount	4V @ 14µA	10 nC @ 10 V	55 V	±20V	293 pF @ 25 V	-	-	PG-TO252-3-11	-	47W (Tc)	-55°C ~ 175°C (TJ)
IPD160N04LGBTMA1 MOSFET N-CH 40V 30A TO252-3 Infineon Technologies	4,739	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	16mOhm @ 30A, 10V	Surface Mount	2V @ 10µA	15 nC @ 10 V	40 V	±20V	1200 pF @ 20 V	-	-	PG-TO252-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
IPD170N04NGBTMA1 MOSFET N-CH 40V 30A TO252-3 Infineon Technologies	5,536	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	17mOhm @ 30A, 10V	Surface Mount	4V @ 10µA	11 nC @ 10 V	40 V	±20V	880 pF @ 20 V	-	-	PG-TO252-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
IPD250N06N3GBTMA1 MOSFET N-CH 60V 28A TO252-3 Infineon Technologies	3,463	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Tc)	10V	25mOhm @ 28A, 10V	Surface Mount	4V @ 11µA	15 nC @ 10 V	60 V	±20V	1200 pF @ 30 V	-	-	PG-TO252-3	-	36W (Tc)	-55°C ~ 175°C (TJ)
IPD25CNE8N G MOSFET N-CH 85V 35A TO252-3 Infineon Technologies	6,708	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	25mOhm @ 35A, 10V	Surface Mount	4V @ 39µA	31 nC @ 10 V	85 V	±20V	2070 pF @ 40 V	-	-	PG-TO252-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPD25N06S240ATMA1 MOSFET N-CH 55V 29A TO252-3 Infineon Technologies	5,150	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 13A, 10V	Surface Mount	4V @ 26µA	18 nC @ 10 V	55 V	±20V	513 pF @ 25 V	-	-	PG-TO252-3-11	-	68W (Tc)	-55°C ~ 175°C (TJ)

共 6460 条记录«上一页 1... 507 508 509 510511512 513 514...646 下一页»