Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 510

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB80N06S2L06ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	2,381	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6mOhm @ 69A, 10V	Surface Mount	2V @ 180µA	150 nC @ 10 V	55 V	±20V	3800 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2L07ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	3,922	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.7mOhm @ 60A, 10V	Surface Mount	2V @ 150µA	130 nC @ 10 V	55 V	±20V	3160 pF @ 25 V	-	-	PG-TO263-3-2	-	210W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2L09ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	2,466	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	8.2mOhm @ 52A, 10V	Surface Mount	2V @ 125µA	105 nC @ 10 V	55 V	±20V	2620 pF @ 25 V	-	-	PG-TO263-3-2	-	190W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2L11ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	6,566	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	10.7mOhm @ 60A, 10V	Surface Mount	2V @ 93µA	80 nC @ 10 V	55 V	±20V	2075 pF @ 25 V	-	-	PG-TO263-3-2	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPD035N06L3GATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	7,430	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	3.5mOhm @ 90A, 10V	Surface Mount	2.2V @ 93µA	79 nC @ 4.5 V	60 V	±20V	13000 pF @ 30 V	-	-	PG-TO252-3	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPD038N04NGBTMA1 MOSFET N-CH 40V 90A TO252-3 Infineon Technologies	7,454	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	3.8mOhm @ 90A, 10V	Surface Mount	4V @ 45µA	56 nC @ 10 V	40 V	±20V	4500 pF @ 20 V	-	-	PG-TO252-3	-	94W (Tc)	-55°C ~ 175°C (TJ)
IPD042P03L3GBTMA1 MOSFET P-CH 30V 70A TO252-3 Infineon Technologies	4,980	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	4.2mOhm @ 70A, 10V	Surface Mount	2V @ 270µA	175 nC @ 10 V	30 V	±20V	12400 pF @ 15 V	-	-	PG-TO252-3-11	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPD068N10N3GBTMA1 MOSFET N-CH 100V 90A TO252-3 Infineon Technologies	8,538	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	6V, 10V	6.8mOhm @ 90A, 10V	Surface Mount	3.5V @ 90µA	68 nC @ 10 V	100 V	±20V	4910 pF @ 50 V	-	-	PG-TO252-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPD082N10N3GBTMA1 MOSFET N-CH 100V 80A TO252-3 Infineon Technologies	9,753	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	6V, 10V	8.2mOhm @ 73A, 10V	Surface Mount	3.5V @ 75µA	55 nC @ 10 V	100 V	±20V	3980 pF @ 50 V	-	-	PG-TO252-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPD088N04LGBTMA1 MOSFET N-CH 40V 50A TO252-3 Infineon Technologies	5,149	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	8.8mOhm @ 50A, 10V	Surface Mount	2V @ 16µA	28 nC @ 10 V	40 V	±20V	2100 pF @ 20 V	-	-	PG-TO252-3	-	47W (Tc)	-55°C ~ 175°C (TJ)

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