Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 509

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IMBG65R007M2HXTMA1 SICFET N-CH 650V 238A TO263-7 Infineon Technologies	7,676	-	询价单	数据表	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	238A (Tc)	15V, 20V	8.5mOhm @ 146.3A, 18V	Surface Mount	5.6V @ 2.97mA	179 nC @ 18 V	650 V	+23V, -7V	6359 pF @ 400 V	-	-	PG-TO263-7-12	-	789W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R007M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	8,463	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	210A (Tc)	15V, 20V	6.1mOhm @ 146.3A, 20V	Through Hole	5.6V @ 29.7mA	179 nC @ 18 V	650 V	+23V, -7V	6359 pF @ 400 V	-	-	PG-TO247-4-U02	-	625W (Tc)	-55°C ~ 175°C (TJ)
IPB77N06S212ATMA1 MOSFET N-CH 55V 77A TO263-3 Infineon Technologies	3,647	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	77A (Tc)	10V	11.7mOhm @ 38A, 10V	Surface Mount	4V @ 93µA	60 nC @ 10 V	55 V	±20V	1770 pF @ 25 V	-	-	PG-TO263-3-2	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPB80N04S204ATMA1 MOSFET N-CH 40V 80A TO263-3 Infineon Technologies	2,280	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	3.4mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	170 nC @ 10 V	40 V	±20V	5300 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S205ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	6,459	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4.8mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	170 nC @ 10 V	55 V	±20V	5110 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S207ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	7,454	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	6.3mOhm @ 68A, 10V	Surface Mount	4V @ 180µA	110 nC @ 10 V	55 V	±20V	3400 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S208ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	7,894	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7.7mOhm @ 58A, 10V	Surface Mount	4V @ 150µA	96 nC @ 10 V	55 V	±20V	2860 pF @ 25 V	-	-	PG-TO263-3-2	-	215W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S209ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	7,109	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8.8mOhm @ 50A, 10V	Surface Mount	4V @ 125µA	80 nC @ 10 V	55 V	±20V	2360 pF @ 25 V	-	-	PG-TO263-3-2	-	190W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2H5ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	9,864	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.2mOhm @ 80A, 10V	Surface Mount	4V @ 230µA	155 nC @ 10 V	55 V	±20V	4400 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S2L05ATMA1 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	9,995	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	4.5mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	230 nC @ 10 V	55 V	±20V	5700 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)

共 6460 条记录«上一页 1... 505 506 507 508509510 511 512...646 下一页»