Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 508

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB160N04S203ATMA1 MOSFET N-CH 40V 160A TO263-7 Infineon Technologies	8,476	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	10V	2.9mOhm @ 60A, 10V	Surface Mount	4V @ 250µA	170 nC @ 10 V	40 V	±20V	5300 pF @ 25 V	-	-	PG-TO263-7-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB160N04S2L03ATMA1 MOSFET N-CH 40V 160A TO263-7 Infineon Technologies	6,130	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	160A (Tc)	4.5V, 10V	2.7mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	230 nC @ 5 V	40 V	±20V	6000 pF @ 15 V	-	-	PG-TO263-7-3	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB230N06L3GATMA1 MOSFET N-CH 60V 30A D2PAK Infineon Technologies	3,222	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	23mOhm @ 30A, 10V	Surface Mount	2.2V @ 11µA	10 nC @ 4.5 V	60 V	±20V	1600 pF @ 30 V	-	-	PG-TO263-3	-	36W (Tc)	-55°C ~ 175°C (TJ)
IPB26CN10NGATMA1 MOSFET N-CH 100V 35A D2PAK Infineon Technologies	3,722	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	26mOhm @ 35A, 10V	Surface Mount	4V @ 39µA	31 nC @ 10 V	100 V	±20V	2070 pF @ 50 V	-	-	PG-TO263-3	-	71W (Tc)	-55°C ~ 175°C (TJ)
IPB34CN10NGATMA1 MOSFET N-CH 100V 27A D2PAK Infineon Technologies	6,942	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	34mOhm @ 27A, 10V	Surface Mount	4V @ 29µA	24 nC @ 10 V	100 V	±20V	1570 pF @ 50 V	-	-	PG-TO263-3	-	58W (Tc)	-55°C ~ 175°C (TJ)
IPB50R250CPATMA1 MOSFET N-CH 550V 13A TO263-3 Infineon Technologies	5,545	-	询价单	数据表	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	250mOhm @ 7.8A, 10V	Surface Mount	3.5V @ 520µA	36 nC @ 10 V	550 V	±20V	1420 pF @ 100 V	-	-	PG-TO263-3-2	-	114W (Tc)	-55°C ~ 150°C (TJ)
IPB60R600CPATMA1 MOSFET N-CH 600V 6.1A D2PAK Infineon Technologies	4,901	-	询价单	数据表	CoolMOS™ CP	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.1A (Tc)	10V	600mOhm @ 3.3A, 10V	Surface Mount	3.5V @ 220µA	27 nC @ 10 V	600 V	±20V	550 pF @ 100 V	-	-	PG-TO263-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
IPB70N04S3-07 MOSFET N-CH 40V 80A TO263-3 Infineon Technologies	5,871	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	6.2mOhm @ 70A, 10V	Surface Mount	4V @ 50µA	40 nC @ 10 V	40 V	±20V	2700 pF @ 25 V	-	-	PG-TO263-3-2	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPB70N10SL16ATMA1 MOSFET N-CH 100V 70A TO263-3 Infineon Technologies	4,652	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	16mOhm @ 50A, 10V	Surface Mount	2V @ 2mA	240 nC @ 10 V	100 V	±20V	4540 pF @ 25 V	-	-	PG-TO263-3-2	-	250W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R020M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	8,459	-	询价单	数据表	CoolSiC™ Gen 2	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	83A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	Through Hole	5.6V @ 9.5mA	57 nC @ 18 V	650 V	+23V, -7V	2038 pF @ 400 V	-	-	PG-TO247-4-8	-	273W (Tc)	-55°C ~ 175°C (TJ)

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