Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 507

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB023N06N3GATMA1 MOSFET N-CH 60V 140A TO263-7 Infineon Technologies	5,697	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	140A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	4V @ 141µA	198 nC @ 10 V	60 V	±20V	16000 pF @ 30 V	-	-	PG-TO263-7	-	214W (Tc)	-55°C ~ 175°C (TJ)
IPB034N06N3GATMA1 MOSFET N-CH 60V 100A TO263-7 Infineon Technologies	7,353	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.4mOhm @ 100A, 10V	Surface Mount	4V @ 93µA	130 nC @ 10 V	60 V	±20V	11000 pF @ 30 V	-	-	PG-TO263-7	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPB039N04LGATMA1 MOSFET N-CH 40V 80A D2PAK Infineon Technologies	9,673	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.9mOhm @ 80A, 10V	Surface Mount	2V @ 45µA	78 nC @ 10 V	40 V	±20V	6100 pF @ 25 V	-	-	PG-TO263-3	-	94W (Tc)	-55°C ~ 175°C (TJ)
IPB08CN10N G MOSFET N-CH 100V 95A D2PAK Infineon Technologies	8,307	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	95A (Tc)	10V	8.2mOhm @ 95A, 10V	Surface Mount	4V @ 130µA	100 nC @ 10 V	100 V	±20V	6660 pF @ 50 V	-	-	PG-TO263-3	-	167W (Tc)	-55°C ~ 175°C (TJ)
IPB093N04LGATMA1 MOSFET N-CH 40V 50A D2PAK Infineon Technologies	2,516	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	9.3mOhm @ 50A, 10V	Surface Mount	2V @ 16µA	28 nC @ 10 V	40 V	±20V	2100 pF @ 20 V	-	-	PG-TO263-3	-	47W (Tc)	-55°C ~ 175°C (TJ)
IPB100N04S204ATMA1 MOSFET N-CH 40V 100A TO263-3 Infineon Technologies	9,658	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.3mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	172 nC @ 10 V	40 V	±20V	5300 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB100N04S2L03ATMA1 MOSFET N-CH 40V 100A TO263-3 Infineon Technologies	6,746	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	3mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	230 nC @ 10 V	40 V	±20V	6000 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB100N06S205ATMA1 MOSFET N-CH 55V 100A TO263-3 Infineon Technologies	2,755	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	4.7mOhm @ 80A, 10V	Surface Mount	4V @ 250µA	170 nC @ 10 V	55 V	±20V	5110 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB100N06S2L05ATMA1 MOSFET N-CH 55V 100A TO263-3 Infineon Technologies	7,536	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	4.4mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	230 nC @ 10 V	55 V	±20V	5660 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB12CN10N G MOSFET N-CH 100V 67A D2PAK Infineon Technologies	3,417	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	12.6mOhm @ 67A, 10V	Surface Mount	4V @ 83µA	65 nC @ 10 V	100 V	±20V	4320 pF @ 50 V	-	-	PG-TO263-3	-	125W (Tc)	-55°C ~ 175°C (TJ)

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