Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 506

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPA90R500C3XKSA1 MOSFET N-CH 900V 11A TO220-FP Infineon Technologies	2,738	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	500mOhm @ 6.6A, 10V	Through Hole	3.5V @ 740µA	68 nC @ 10 V	900 V	±20V	1700 pF @ 100 V	-	-	PG-TO220-FP	-	34W (Tc)	-55°C ~ 150°C (TJ)
IPA90R800C3XKSA1 MOSFET N-CH 900V 6.9A TO220-FP Infineon Technologies	8,278	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.9A (Tc)	10V	800mOhm @ 4.1A, 10V	Through Hole	3.5V @ 460µA	42 nC @ 10 V	900 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-FP	-	33W (Tc)	-55°C ~ 150°C (TJ)
IRLB3036PBF MOSFET N-CH 60V 195A TO220AB Infineon Technologies	9,196	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	Through Hole	2.5V @ 250µA	140 nC @ 4.5 V	60 V	±16V	11210 pF @ 50 V	-	-	TO-220AB	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRFP90N20DPBF MOSFET N-CH 200V 94A TO247AC Infineon Technologies	3,362	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	94A (Tc)	10V	23mOhm @ 56A, 10V	Through Hole	5V @ 250µA	270 nC @ 10 V	200 V	±30V	6040 pF @ 25 V	-	-	TO-247AC	-	580W (Tc)	-55°C ~ 175°C (TJ)
IPTC044N15NM5ATMA1 OPTIMOS 5 POWER MOSFET Infineon Technologies	11	-	询价单	数据表	OptiMOS™ 5	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	19.4A (Ta), 174A (Tc)	8V, 10V	4.4mOhm @ 50A, 10V	Surface Mount	4.6V @ 235µA	89 nC @ 10 V	150 V	±20V	7000 pF @ 75 V	-	-	PG-HDSOP-16-2	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)
IPT039N15N5ATMA1 OPTIMOS 5 POWER MOSFET Infineon Technologies	9,504	-	询价单	数据表	OptiMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 190A (Tc)	8V, 10V	3.9mOhm @ 50A, 10V	Surface Mount	4.6V @ 257µA	98 nC @ 10 V	150 V	±20V	7700 pF @ 75 V	-	-	PG-HSOF-8	-	3.8W (Ta), 319W (Tc)	-55°C ~ 175°C (TJ)
IPTC014N10NM5ATMA1 OPTIMOS 5 POWER MOSFET Infineon Technologies	8,273	-	询价单	数据表	OptiMOS™ 5	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	37A (Ta), 365A (Tc)	6V, 10V	1.4mOhm @ 150A, 10V	Surface Mount	3.8V @ 280µA	211 nC @ 10 V	100 V	±20V	16000 pF @ 50 V	-	-	PG-HDSOP-16-2	-	3.8W (Ta), 375W (Tc)	-55°C ~ 175°C (TJ)
IPW60R070C6FKSA1 MOSFET N-CH 600V 53A TO247-3 Infineon Technologies	2,427	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	70mOhm @ 25.8A, 10V	Through Hole	3.5V @ 1.72mA	170 nC @ 10 V	600 V	±20V	3800 pF @ 100 V	-	-	PG-TO247-3-1	-	391W (Tc)	-55°C ~ 150°C (TJ)
IPB021N06N3GATMA1 MOSFET N-CH 60V 120A D2PAK Infineon Technologies	7,175	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.1mOhm @ 100A, 10V	Surface Mount	4V @ 196µA	275 nC @ 10 V	60 V	±20V	23000 pF @ 30 V	-	-	PG-TO263-3	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB022N04LGATMA1 MOSFET N-CH 40V 90A D2PAK Infineon Technologies	9,045	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	2.2mOhm @ 90A, 10V	Surface Mount	2V @ 95µA	166 nC @ 10 V	40 V	±20V	13000 pF @ 20 V	-	-	PG-TO263-3	-	167W (Tc)	-55°C ~ 175°C (TJ)

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