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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF520NLPBFMOSFET N-CH 100V 9.7A TO262 Infineon Technologies |
4,961 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | Through Hole | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IPAW60R280P7SE8228XKSA1MOSFET N-CH 600V 12A TO220 Infineon Technologies |
7,831 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | Through Hole | 4V @ 190µA | 18 nC @ 10 V | 600 V | ±20V | 761 pF @ 400 V | - | - | PG-TO220-FP | - | 24W (Tc) | -40°C ~ 150°C (TJ) |
|
SPU04N60S5BKMA1MOSFET N-CH 600V 4.5A TO251-3 Infineon Technologies |
8,161 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | Through Hole | 5.5V @ 200µA | 22.9 nC @ 10 V | 600 V | ±20V | 580 pF @ 25 V | - | - | PG-TO251-3-21 | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFHM8334TRPBFMOSFET N-CH 30V 13A 8PQFN Infineon Technologies |
7,533 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 9mOhm @ 20A, 10V | Surface Mount | 2.35V @ 25µA | 15 nC @ 10 V | 30 V | ±20V | 1180 pF @ 10 V | - | - | 8-PQFN (3.3x3.3), Power33 | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFHM8235TRPBFMOSFET N-CH 25V 16A 8PQFN Infineon Technologies |
3,649 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 4.5V, 10V | 7.7mOhm @ 20A, 10V | Surface Mount | 2.35V @ 25µA | 12 nC @ 4.5 V | 25 V | ±20V | 1040 pF @ 10 V | - | - | 8-PQFN (3.3x3.3), Power33 | - | 3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD60R1K0CEATMA1MOSFET N-CH 600V 4.3A TO252-3 Infineon Technologies |
9,644 | - |
|
数据表 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | Surface Mount | 3.5V @ 130µA | 13 nC @ 10 V | 600 V | ±20V | 280 pF @ 100 V | - | - | PG-TO252-3 | - | 37W (Tc) | -40°C ~ 150°C (TJ) |
|
IPB05N03LBMOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
5,599 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 5mOhm @ 60A, 10V | Surface Mount | 2V @ 40µA | 25 nC @ 5 V | 30 V | ±20V | 3209 pF @ 15 V | - | - | PG-TO263-3-2 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
ISZ024N06NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
5,642 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPP03N60C3HKSA1MOSFET N-CH 650V 3.2A TO220-3 Infineon Technologies |
2,026 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Through Hole | 3.9V @ 135µA | 17 nC @ 10 V | 650 V | ±20V | 400 pF @ 25 V | - | - | PG-TO220-3-1 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
|
BSB104N08NP3GXUMA3TRENCH 40<-<100V Infineon Technologies |
3,391 | - |
|
数据表 |
- | DirectFET™ Isometric MP | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | Surface Mount | 3.5V @ 40µA | 31 nC @ 10 V | 80 V | ±20V | 2100 pF @ 40 V | - | - | MG-WDSON-2-6 | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) |
