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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSS209PW L6327MOSFET P-CH 20V 580MA SOT323-3 Infineon Technologies |
3,229 | - |
|
数据表 |
OptiMOS™ | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 580mA (Ta) | 2.5V, 4.5V | 550mOhm @ 580mA, 4.5V | Surface Mount | 1.2V @ 3.5µA | 1.38 nC @ 4.5 V | 20 V | ±12V | 89.9 pF @ 15 V | - | - | PG-SOT323 | - | 300mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
BSS214NW L6327MOSFET N-CH 20V 1.5A SOT323-3 Infineon Technologies |
7,569 | - |
|
数据表 |
OptiMOS™ | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | Surface Mount | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 20 V | ±12V | 143 pF @ 10 V | - | - | PG-SOT323 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
BSS84PW L6327MOSFET P-CH 60V 150MA SOT323-3 Infineon Technologies |
2,158 | - |
|
数据表 |
SIPMOS® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150mA (Ta) | 4.5V, 10V | 8Ohm @ 150mA, 10V | Surface Mount | 2V @ 20µA | 1.5 nC @ 10 V | 60 V | ±20V | 19.1 pF @ 25 V | - | - | PG-SOT323 | - | 300mW (Ta) | -55°C ~ 150°C (TJ) |
|
IPA028N08N3GXKSA1MOSFET N-CH 80V 89A TO220-FP Infineon Technologies |
2,083 | - |
|
数据表 |
OptiMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 89A (Tc) | 6V, 10V | 2.8mOhm @ 89A, 10V | Through Hole | 3.5V @ 270µA | 206 nC @ 10 V | 80 V | ±20V | 14200 pF @ 40 V | - | - | PG-TO220-FP | - | 42W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPA100N08N3GXKSA1MOSFET N-CH 80V 40A TO220-FP Infineon Technologies |
9,940 | - |
|
数据表 |
OptiMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 6V, 10V | 10mOhm @ 40A, 10V | Through Hole | 3.5V @ 46µA | 35 nC @ 10 V | 80 V | ±20V | 2410 pF @ 40 V | - | - | PG-TO220-FP | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA50R399CPXKSA1MOSFET N-CH 500V 9A TO220-FP Infineon Technologies |
9,454 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | Through Hole | 3.5V @ 330µA | 23 nC @ 10 V | 500 V | ±20V | 890 pF @ 100 V | - | - | PG-TO220-3-31 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA60R520CPXKSA1MOSFET N-CH 600V 6.8A TO220-FP Infineon Technologies |
7,450 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | Through Hole | 3.5V @ 250µA | 31 nC @ 10 V | 600 V | ±20V | 630 pF @ 100 V | - | - | PG-TO220-3-31 | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA60R600CPXKSA1MOSFET N-CH 600V 6.1A TO220-FP Infineon Technologies |
6,889 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | Through Hole | 3.5V @ 220µA | 27 nC @ 10 V | 600 V | ±20V | 550 pF @ 100 V | - | - | PG-TO220-3-31 | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA90R1K0C3XKSA1MOSFET N-CH 900V 5.7A TO220-FP Infineon Technologies |
2,094 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | Through Hole | 3.5V @ 370µA | 34 nC @ 10 V | 900 V | ±20V | 850 pF @ 100 V | - | - | PG-TO220-FP | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA90R340C3XKSA1MOSFET N-CH 900V 15A TO220-FP Infineon Technologies |
3,804 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | Through Hole | 3.5V @ 1mA | 94 nC @ 10 V | 900 V | ±20V | 2400 pF @ 100 V | - | - | PG-TO220-FP | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
