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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPF015N10N5ATMA1

IPF015N10N5ATMA1

TRENCH >=100V

Infineon Technologies

34 -
IPF015N10N5ATMA1

数据表

OptiMOS™ 5 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 35A (Ta), 276A (Tc) 6V, 10V 1.53mOhm @ 100A, 10V Surface Mount 3.8V @ 279µA 210 nC @ 10 V 100 V ±20V 16000 pF @ 50 V - - PG-TO263-7-1 - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ)
IRF7821TRPBF

IRF7821TRPBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies

9,346 -
IRF7821TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V Surface Mount 1V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1010 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 155°C (TJ)
IRF540ZPBF

IRF540ZPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies

5,343 -
IRF540ZPBF

数据表

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 36A (Tc) 10V 26.5mOhm @ 22A, 10V Through Hole 4V @ 250µA 63 nC @ 10 V 100 V ±20V 1770 pF @ 25 V - - TO-220AB - 92W (Tc) -55°C ~ 175°C (TJ)
IRLR2908TRPBF

IRLR2908TRPBF

MOSFET N-CH 80V 30A DPAK

Infineon Technologies

5,349 -
IRLR2908TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V Surface Mount 2.5V @ 250µA 33 nC @ 4.5 V 80 V ±16V 1890 pF @ 25 V - - TO-252AA (DPAK) - 120W (Tc) -55°C ~ 175°C (TJ)
IRLR3705ZTRPBF

IRLR3705ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

9,446 -
IRLR3705ZTRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V Surface Mount 3V @ 250µA 66 nC @ 5 V 55 V ±16V 2900 pF @ 25 V - - TO-252AA (DPAK) - 130W (Tc) -55°C ~ 175°C (TJ)
BSC050N10NS5ATMA1

BSC050N10NS5ATMA1

MOSFET N-CH 100V 16A/100A TDSON

Infineon Technologies

7,997 -
BSC050N10NS5ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 100A (Tc) 6V, 10V 5mOhm @ 50A, 10V Surface Mount 3.8V @ 72µA 61 nC @ 10 V 100 V ±20V 4300 pF @ 50 V - - PG-TDSON-8-7 - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
BSC152N10NSFGATMA1

BSC152N10NSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

Infineon Technologies

4,163 -
BSC152N10NSFGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.4A (Ta), 63A (Tc) 10V 15.2mOhm @ 25A, 10V Surface Mount 4V @ 72µA 29 nC @ 10 V 100 V ±20V 1900 pF @ 50 V - - PG-TDSON-8-1 - 114W (Tc) -55°C ~ 150°C (TJ)
BSC200P03LSGAUMA1

BSC200P03LSGAUMA1

MOSFET P-CH 30V 9.9/12.5A 8TDSON

Infineon Technologies

7,788 -
BSC200P03LSGAUMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.9A (Ta), 12.5A (Tc) 10V 20mOhm @ 12.5A, 10V Surface Mount 2.2V @ 100µA 48.5 nC @ 10 V 30 V ±25V 2430 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ)
BSL202SNL6327HTSA1

BSL202SNL6327HTSA1

MOSFET N-CH 20V 7.5A TSOP-6

Infineon Technologies

8,450 -
BSL202SNL6327HTSA1

数据表

OptiMOS™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 2.5V, 4.5V 22mOhm @ 7.5A, 4.5V Surface Mount 1.2V @ 30µA 8.7 nC @ 4.5 V 20 V ±12V 1147 pF @ 10 V - - PG-TSOP6-6 - 2W (Ta) -55°C ~ 150°C (TJ)
BSC110N15NS5ATMA1

BSC110N15NS5ATMA1

MOSFET N-CH 150V 76A TDSON

Infineon Technologies

6,506 -
BSC110N15NS5ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 76A (Tc) 8V, 10V 11mOhm @ 38A, 10V Surface Mount 4.6V @ 91µA 35 nC @ 10 V 150 V ±20V 2770 pF @ 75 V - - PG-TDSON-8-7 - 125W (Tc) -55°C ~ 150°C (TJ)
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