Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 502

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFU4620PBF MOSFET N-CH 200V 24A IPAK Infineon Technologies	6,725	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	78mOhm @ 15A, 10V	Through Hole	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	IPAK (TO-251AA)	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRLSL3036PBF MOSFET N-CH 60V 195A TO262 Infineon Technologies	4,376	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	Through Hole	2.5V @ 250µA	140 nC @ 4.5 V	60 V	±16V	11210 pF @ 50 V	-	-	TO-262	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRLS3036-7PPBF MOSFET N-CH 60V 240A D2PAK Infineon Technologies	9,504	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	4.5V, 10V	1.9mOhm @ 180A, 10V	Surface Mount	2.5V @ 250µA	160 nC @ 4.5 V	60 V	±16V	11270 pF @ 50 V	-	-	D2PAK (7-Lead)	-	380W (Tc)	-55°C ~ 175°C (TJ)
IRFS4620PBF MOSFET N-CH 200V 24A D2PAK Infineon Technologies	4,520	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	77.5mOhm @ 15A, 10V	Surface Mount	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	D2PAK	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRFS5620PBF MOSFET N-CH 200V 24A D2PAK Infineon Technologies	8,090	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	77.5mOhm @ 15A, 10V	Surface Mount	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	D2PAK	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRFR4615PBF MOSFET N-CH 150V 33A DPAK Infineon Technologies	8,887	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	42mOhm @ 21A, 10V	Surface Mount	5V @ 100µA	26 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	TO-252AA (DPAK)	-	144W (Tc)	-55°C ~ 175°C (TJ)
IRFR4620PBF MOSFET N-CH 200V 24A D-PAK Infineon Technologies	2,169	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	78mOhm @ 15A, 10V	Surface Mount	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	TO-252AA (DPAK)	-	144W (Tc)	-55°C ~ 175°C (TJ)
IPP100N10S305AKSA1 MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	65	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	5.1mOhm @ 100A, 10V	Through Hole	4V @ 240µA	176 nC @ 10 V	100 V	±20V	11570 pF @ 25 V	-	-	PG-TO220-3-1	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB80N08S2L07ATMA1 MOSFET N-CH 75V 80A TO263-3 Infineon Technologies	64	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.8mOhm @ 80A, 10V	Surface Mount	2V @ 250µA	233 nC @ 10 V	75 V	±20V	5400 pF @ 25 V	-	-	PG-TO263-3-2	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPB180N08S402ATMA1 MOSFET N-CH 80V 180A TO263-7 Infineon Technologies	35	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	2.2mOhm @ 100A, 10V	Surface Mount	4V @ 220µA	167 nC @ 10 V	80 V	±20V	11550 pF @ 25 V	AEC-Q101	-	PG-TO263-7-3	Automotive	277W (Tc)	-55°C ~ 175°C (TJ)

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