Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 501

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB034N03LGATMA1 MOSFET N-CH 30V 80A D2PAK Infineon Technologies	2,353	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.4mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	51 nC @ 10 V	30 V	±20V	5300 pF @ 15 V	-	-	PG-TO263-3	-	94W (Tc)	-55°C ~ 175°C (TJ)
IPB042N03LGATMA1 MOSFET N-CH 30V 70A D2PAK Infineon Technologies	4,533	-	询价单	数据表	OptiMOS™ 3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	4.5V, 10V	4.2mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	38 nC @ 10 V	30 V	±20V	3900 pF @ 15 V	-	-	PG-TO263-3	-	79W (Tc)	-55°C ~ 175°C (TJ)
IPB055N03LGATMA1 MOSFET N-CH 30V 50A D2PAK Infineon Technologies	5,606	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	5.5mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	31 nC @ 10 V	30 V	±20V	3200 pF @ 15 V	-	-	PG-TO263-3	-	68W (Tc)	-55°C ~ 175°C (TJ)
IPB096N03LGATMA1 MOSFET N-CH 30V 35A D2PAK Infineon Technologies	4,432	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	9.6mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	15 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TO263-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPS090N03LGAKMA1 MOSFET N-CH 30V 40A TO251-3 Infineon Technologies	3,342	-	询价单	数据表	OptiMOS™	TO-251-3 Stub Leads, IPAK	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	9mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	15 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TO251-3-11	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPS135N03LGAKMA1 MOSFET N-CH 30V 30A TO251-3 Infineon Technologies	9,414	-	询价单	数据表	OptiMOS™	TO-251-3 Stub Leads, IPAK	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	13.5mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	10 nC @ 10 V	30 V	±20V	1000 pF @ 15 V	-	-	PG-TO251-3-11	-	31W (Tc)	-55°C ~ 175°C (TJ)
IPU135N03L G MOSFET N-CH 30V 30A TO251-3 Infineon Technologies	3,045	-	询价单	数据表	OptiMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	13.5mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	10 nC @ 10 V	30 V	±20V	1000 pF @ 15 V	-	-	PG-TO251-3	-	31W (Tc)	-55°C ~ 175°C (TJ)
SPA16N50C3XKSA1 MOSFET N-CH 560V 16A TO220-3 Infineon Technologies	34	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	280mOhm @ 10A, 10V	Through Hole	3.9V @ 675µA	66 nC @ 10 V	560 V	±20V	1600 pF @ 25 V	-	-	PG-TO220-3-31	-	34W (Tc)	-55°C ~ 150°C (TJ)
IRF6218STRLPBF MOSFET P-CH 150V 27A D2PAK Infineon Technologies	6,009	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	150mOhm @ 16A, 10V	Surface Mount	5V @ 250µA	110 nC @ 10 V	150 V	±20V	2210 pF @ 25 V	-	-	D2PAK	-	250W (Tc)	-55°C ~ 175°C (TJ)
IRFSL4620PBF MOSFET N-CH 200V 24A TO262 Infineon Technologies	3,751	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	77.5mOhm @ 15A, 10V	Through Hole	5V @ 100µA	38 nC @ 10 V	200 V	±20V	1710 pF @ 50 V	-	-	TO-262	-	144W (Tc)	-55°C ~ 175°C (TJ)

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