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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF6724MTRPBFMOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
4,375 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | Surface Mount | 2.35V @ 100µA | 54 nC @ 4.5 V | 30 V | ±20V | 4404 pF @ 15 V | - | - | DIRECTFET™ MX | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
|
BSZ076N06NS3GATMA1MOSFET N-CH 60V 20A 8TSDSON Infineon Technologies |
4,810 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 7.6mOhm @ 20A, 10V | Surface Mount | 4V @ 35µA | 50 nC @ 10 V | 60 V | ±20V | 4000 pF @ 30 V | - | - | PG-TSDSON-8 | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) |
|
IPAW60R360P7SXKSA1MOSFET N-CH 650V 9A TO220 Infineon Technologies |
34 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | Through Hole | 4V @ 140µA | 13 nC @ 10 V | 650 V | ±30V | 555 pF @ 400 V | - | - | PG-TO220 Full Pack | - | 22W (Tc) | -40°C ~ 150°C (TJ) |
|
IRFR3711ZTRPBFMOSFET N-CH 20V 93A DPAK Infineon Technologies |
26 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | Surface Mount | 2.45V @ 250µA | 27 nC @ 4.5 V | 20 V | ±20V | 2160 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF540ZLPBFMOSFET N-CH 100V 36A TO262 Infineon Technologies |
48 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 63 nC @ 10 V | 100 V | ±20V | 1770 pF @ 25 V | - | - | TO-262 | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB7740PBFMOSFET N-CH 75V 87A TO220AB Infineon Technologies |
65 | - |
|
数据表 |
StrongIRFET™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | Through Hole | 3.7V @ 100µA | 122 nC @ 10 V | 75 V | ±20V | 4650 pF @ 25 V | - | - | TO-220AB | - | 143W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7473TRPBFMOSFET N-CH 100V 6.9A 8SO Infineon Technologies |
84 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.9A (Ta) | 10V | 26mOhm @ 4.1A, 10V | Surface Mount | 5.5V @ 250µA | 61 nC @ 10 V | 100 V | ±20V | 3180 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPA90R1K2C3XKSA1MOSFET N-CH 900V 5.1A TO220-FP Infineon Technologies |
8,695 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | Through Hole | 3.5V @ 310µA | 28 nC @ 10 V | 900 V | ±20V | 710 pF @ 100 V | - | - | PG-TO220-FP | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW90R120C3FKSA1MOSFET N-CH 900V 36A TO247-3 Infineon Technologies |
6,474 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | Through Hole | 3.5V @ 2.9mA | 270 nC @ 10 V | 900 V | ±20V | 6800 pF @ 100 V | - | - | PG-TO247-3-1 | - | 417W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF6215STRLPBFMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
94 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | Surface Mount | 4V @ 250µA | 66 nC @ 10 V | 150 V | ±20V | 860 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) |
