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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFS3006-7PPBF

IRFS3006-7PPBF

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies

7,695 -
IRFS3006-7PPBF

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 2.1mOhm @ 168A, 10V Surface Mount 4V @ 250µA 300 nC @ 10 V 60 V ±20V 8850 pF @ 50 V - - D2PAK (7-Lead) - 375W (Tc) -55°C ~ 175°C (TJ)
AUIRFR8403

AUIRFR8403

MOSFET N-CH 40V 100A DPAK

Infineon Technologies

88 -
AUIRFR8403

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 3.1mOhm @ 76A, 10V Surface Mount 3.9V @ 100µA 99 nC @ 10 V 40 V ±20V 3171 pF @ 25 V - - TO-252AA (DPAK) - 99W (Tc) -55°C ~ 175°C (TJ)
IRFS3006PBF

IRFS3006PBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

9,813 -
IRFS3006PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 2.5mOhm @ 170A, 10V Surface Mount 4V @ 250µA 300 nC @ 10 V 60 V ±20V 8970 pF @ 50 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
IRFS3107PBF

IRFS3107PBF

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies

7,981 -
IRFS3107PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 3mOhm @ 140A, 10V Surface Mount 4V @ 250µA 240 nC @ 10 V 75 V ±20V 9370 pF @ 50 V - - D2PAK - 370W (Tc) -55°C ~ 175°C (TJ)
IRFS4010-7PPBF

IRFS4010-7PPBF

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

8,464 -
IRFS4010-7PPBF

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 190A (Tc) 10V 4mOhm @ 110A, 10V Surface Mount 4V @ 250µA 230 nC @ 10 V 100 V ±20V 9830 pF @ 50 V - - D2PAK - 380W (Tc) -55°C ~ 175°C (TJ)
IRFS4010PBF

IRFS4010PBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

8,379 -
IRFS4010PBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.7mOhm @ 106A, 10V Surface Mount 4V @ 250µA 215 nC @ 10 V 100 V ±20V 9575 pF @ 50 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
IRF7707GTRPBF

IRF7707GTRPBF

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies

6,503 -
IRF7707GTRPBF

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V Surface Mount 1.2V @ 250µA 47 nC @ 4.5 V 20 V ±12V 2361 pF @ 15 V - - 8-TSSOP - 1.5W (Ta) -55°C ~ 150°C (TJ)
IRF6795MTR1PBF

IRF6795MTR1PBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies

5,379 -
IRF6795MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 160A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V Surface Mount 2.35V @ 100µA 53 nC @ 4.5 V 25 V ±20V 4280 pF @ 13 V - - DIRECTFET™ MX - 2.8W (Ta), 75W (Tc) -40°C ~ 150°C (TJ)
IRF6633ATR1PBF

IRF6633ATR1PBF

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies

5,388 -
IRF6633ATR1PBF

数据表

HEXFET® DirectFET™ Isometric MU Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 69A (Tc) 4.5V, 10V 5.6mOhm @ 16A, 10V Surface Mount 2.2V @ 250µA 17 nC @ 4.5 V 20 V ±20V 1410 pF @ 10 V - - DIRECTFET™ MU - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1

MOSFET N-CH 60V 22A/90A 2WDSON

Infineon Technologies

83 -
BSB028N06NN3GXUMA1

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta), 90A (Tc) 10V 2.8mOhm @ 30A, 10V Surface Mount 4V @ 102µA 143 nC @ 10 V 60 V ±20V 12000 pF @ 30 V - - MG-WDSON-2, CanPAK M™ - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
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