Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 492

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6215LPBF MOSFET P-CH 150V 13A TO262 Infineon Technologies	6,672	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	290mOhm @ 6.6A, 10V	Through Hole	4V @ 250µA	66 nC @ 10 V	150 V	±20V	860 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
AUXAKF1405ZS-7P MOSFET N-CH 55V 120A D2PAK Infineon Technologies	8,822	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.9mOhm @ 88A, 10V	Surface Mount	4V @ 150µA	230 nC @ 10 V	55 V	±20V	5360 pF @ 25 V	-	-	D2PAK (7-Lead)	-	230W (Tc)	-55°C ~ 175°C (TJ)
IRFSL38N20DPBF MOSFET N-CH 200V 43A TO262 Infineon Technologies	6,095	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	-	54mOhm @ 26A, 10V	Through Hole	5V @ 250µA	91 nC @ 10 V	200 V	-	2900 pF @ 25 V	-	-	TO-262	-	-	-
IRFR3806PBF MOSFET N-CH 60V 43A DPAK Infineon Technologies	2,010	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	10V	15.8mOhm @ 25A, 10V	Surface Mount	4V @ 50µA	30 nC @ 10 V	60 V	±20V	1150 pF @ 50 V	-	-	TO-252AA (DPAK)	-	71W (Tc)	-55°C ~ 175°C (TJ)
IRFSL4310PBF MOSFET N-CH 100V 130A TO262 Infineon Technologies	5,765	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	130A (Tc)	10V	7mOhm @ 75A, 10V	Through Hole	4V @ 250µA	250 nC @ 10 V	100 V	±20V	7670 pF @ 50 V	-	-	TO-262	-	300W (Tc)	-55°C ~ 175°C (TJ)
IRFR1018EPBF MOSFET N-CH 60V 56A DPAK Infineon Technologies	4,795	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	8.4mOhm @ 47A, 10V	Surface Mount	4V @ 100µA	69 nC @ 10 V	60 V	±20V	2290 pF @ 50 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRFS4229PBF MOSFET N-CH 250V 45A D2PAK Infineon Technologies	4,680	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	10V	48mOhm @ 26A, 10V	Surface Mount	5V @ 250µA	110 nC @ 10 V	250 V	±30V	4560 pF @ 25 V	-	-	D2PAK	-	330W (Tc)	-40°C ~ 175°C (TJ)
IRFS3607PBF MOSFET N-CH 75V 80A D2PAK Infineon Technologies	7,016	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	9mOhm @ 46A, 10V	Surface Mount	4V @ 100µA	84 nC @ 10 V	75 V	±20V	3070 pF @ 50 V	-	-	D2PAK	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRL3715STRLPBF MOSFET N-CH 20V 54A D2PAK Infineon Technologies	3,039	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	14mOhm @ 26A, 10V	Surface Mount	3V @ 250µA	17 nC @ 4.5 V	20 V	±20V	1060 pF @ 10 V	-	-	D2PAK	-	3.8W (Ta), 71W (Tc)	-55°C ~ 175°C (TJ)
IRF520NSTRLPBF MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	8,147	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	Surface Mount	4V @ 250µA	25 nC @ 10 V	100 V	±20V	330 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)

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