Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 491

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFB4233PBF MOSFET N-CH 230V 56A TO220AB Infineon Technologies	2,578	-	询价单	数据表	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	37mOhm @ 28A, 10V	Through Hole	5V @ 250µA	170 nC @ 10 V	230 V	±30V	5510 pF @ 25 V	-	-	TO-220AB	-	370W (Tc)	-40°C ~ 175°C (TJ)
IRL1404ZSPBF MOSFET N-CH 40V 75A D2PAK Infineon Technologies	5,464	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	3.1mOhm @ 75A, 10V	Surface Mount	2.7V @ 250µA	110 nC @ 5 V	40 V	±16V	5080 pF @ 25 V	-	-	D2PAK	-	230W (Tc)	-55°C ~ 175°C (TJ)
IPI147N12N3GAKSA1 MOSFET N-CH 120V 56A TO262-3 Infineon Technologies	3,378	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	56A (Ta)	10V	14.7mOhm @ 56A, 10V	Through Hole	4V @ 61µA	49 nC @ 10 V	120 V	±20V	3220 pF @ 60 V	-	-	PG-TO262-3	-	107W (Tc)	-55°C ~ 175°C (TJ)
IRLR3114ZPBF MOSFET N-CH 40V 42A DPAK Infineon Technologies	9,589	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	4.9mOhm @ 42A, 10V	Surface Mount	2.5V @ 100µA	56 nC @ 4.5 V	40 V	±16V	3810 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRF5305LPBF MOSFET P-CH 55V 31A TO262 Infineon Technologies	5,553	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	60mOhm @ 16A, 10V	Through Hole	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1200 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
IRL1404ZLPBF MOSFET N-CH 40V 120A TO262 Infineon Technologies	4,998	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	4.5V, 10V	3.1mOhm @ 75A, 10V	Through Hole	2.7V @ 250µA	110 nC @ 5 V	40 V	±16V	5080 pF @ 25 V	-	-	TO-262	-	230W (Tc)	-55°C ~ 175°C (TJ)
64-6006PBF MOSFET N-CH 300V 46A TO247AC Infineon Technologies	6,330	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	46A (Tc)	10V	59mOhm @ 33A, 10V	Through Hole	5V @ 250µA	247 nC @ 10 V	300 V	±30V	7370 pF @ 25 V	-	-	TO-247AC	-	430W (Tc)	-40°C ~ 175°C (TJ)
IRFS3207PBF MOSFET N-CH 75V 170A D2PAK Infineon Technologies	6,657	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	170A (Tc)	10V	4.5mOhm @ 75A, 10V	Surface Mount	4V @ 250µA	260 nC @ 10 V	75 V	±20V	7600 pF @ 50 V	-	-	D2PAK	-	300W (Tc)	-55°C ~ 175°C (TJ)
IRFS4310ZPBF MOSFET N-CH 100V 120A D2PAK Infineon Technologies	4,297	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	6mOhm @ 75A, 10V	Surface Mount	4V @ 150µA	170 nC @ 10 V	100 V	±20V	6860 pF @ 50 V	-	-	D2PAK	-	250W (Tc)	-55°C ~ 175°C (TJ)
IRF5210LPBF MOSFET P-CH 100V 38A TO262 Infineon Technologies	7,512	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	60mOhm @ 38A, 10V	Through Hole	4V @ 250µA	230 nC @ 10 V	100 V	±20V	2780 pF @ 25 V	-	-	TO-262	-	3.1W (Ta), 170W (Tc)	-55°C ~ 150°C (TJ)

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