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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
64-2096PBF

64-2096PBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies

8,053 -
64-2096PBF

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3.8mOhm @ 110A, 10V Surface Mount 4V @ 250µA 260 nC @ 10 V 75 V ±20V 7580 pF @ 25 V - - D2PAK (7-Lead) - 300W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3806

AUIRFS3806

MOSFET N-CH 60V 43A D2PAK

Infineon Technologies

6,159 -
AUIRFS3806

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 43A (Tc) 10V 15.8mOhm @ 25A, 10V Surface Mount 4V @ 50µA 30 nC @ 10 V 60 V ±20V 1150 pF @ 50 V - - PG-TO263-3 - 71W (Tc) -55°C ~ 175°C (TJ)
IPP80N04S303AKSA1

IPP80N04S303AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

7,463 -
IPP80N04S303AKSA1

数据表

OptiMOS™ T TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.5mOhm @ 80A, 10V Through Hole 4V @ 120µA 110 nC @ 10 V 40 V ±20V 7300 pF @ 25 V - - PG-TO220-3-1 - 188W (Tc) -55°C ~ 175°C (TJ)
IRF7416QTRPBF

IRF7416QTRPBF

MOSFET P-CH 30V 10A 8-SOIC

Infineon Technologies

3,256 -
IRF7416QTRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) - 20mOhm @ 5.6A, 10V Surface Mount 1V @ 250µA 92 nC @ 10 V 30 V - 1700 pF @ 25 V - - 8-SO - - -
IRF2903ZSTRLP

IRF2903ZSTRLP

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies

6,121 -
IRF2903ZSTRLP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 2.4mOhm @ 75A, 10V Surface Mount 4V @ 150µA 240 nC @ 10 V 30 V ±20V 6320 pF @ 25 V - - D2PAK - 290W (Tc) -55°C ~ 175°C (TJ)
IRF1324STRL-7PP

IRF1324STRL-7PP

MOSFET N-CH 24V 240A D2PAK

Infineon Technologies

2,836 -
IRF1324STRL-7PP

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 240A (Tc) 10V 1mOhm @ 160A, 10V Surface Mount 4V @ 250µA 252 nC @ 10 V 24 V ±20V 7700 pF @ 19 V - - D2PAK (7-Lead) - 300W (Tc) -55°C ~ 175°C (TJ)
IRF6726MTR1PBF

IRF6726MTR1PBF

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies

9,820 -
IRF6726MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MT Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 32A (Ta), 180A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V Surface Mount 2.35V @ 150µA 77 nC @ 4.5 V 30 V ±20V 6140 pF @ 15 V - - DIRECTFET™ MT - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6714MTR1PBF

IRF6714MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET

Infineon Technologies

6,590 -
IRF6714MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 29A (Ta), 166A (Tc) 4.5V, 10V 2.1mOhm @ 29A, 10V Surface Mount 2.4V @ 100µA 44 nC @ 4.5 V 25 V ±20V 3890 pF @ 13 V - - DIRECTFET™ MX - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
IRF6725MTR1PBF

IRF6725MTR1PBF

MOSFET N-CH 30V 28A DIRECTFET

Infineon Technologies

9,491 -
IRF6725MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V Surface Mount 2.35V @ 100µA 54 nC @ 4.5 V 30 V ±20V 4700 pF @ 15 V - - DIRECTFET™ MX - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ)
IRF6715MTR1PBF

IRF6715MTR1PBF

MOSFET N-CH 25V 34A DIRECTFET

Infineon Technologies

9,684 -
IRF6715MTR1PBF

数据表

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 34A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 34A, 10V Surface Mount 2.4V @ 100µA 59 nC @ 4.5 V 25 V ±20V 5340 pF @ 13 V - - DIRECTFET™ MX - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
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