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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFU1018EPBFMOSFET N-CH 60V 56A IPAK Infineon Technologies |
8,948 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | Through Hole | 4V @ 100µA | 69 nC @ 10 V | 60 V | ±20V | 2290 pF @ 50 V | - | - | IPAK (TO-251AA) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
IPDH6N03LAGMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
81 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | Surface Mount | 2V @ 30µA | 19 nC @ 5 V | 25 V | ±20V | 2390 pF @ 15 V | - | - | PG-TO252-3-11 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI100N04S3-03N-CHANNEL POWER MOSFET Infineon Technologies |
722 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFU2307ZPBFMOSFET N-CH 75V 42A IPAK Infineon Technologies |
5,317 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | Through Hole | 4V @ 100µA | 75 nC @ 10 V | 75 V | ±20V | 2190 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFU2607ZPBFMOSFET N-CH 75V 42A IPAK Infineon Technologies |
5,740 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | Through Hole | 4V @ 50µA | 51 nC @ 10 V | 75 V | ±20V | 1440 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFU3806PBFMOSFET N-CH 60V 43A IPAK Infineon Technologies |
2,752 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | Through Hole | 4V @ 50µA | 30 nC @ 10 V | 60 V | ±20V | 1150 pF @ 50 V | - | - | IPAK (TO-251AA) | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLU3114ZPBFMOSFET N-CH 40V 42A I-PAK Infineon Technologies |
2,538 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | Through Hole | 2.5V @ 100µA | 56 nC @ 4.5 V | 40 V | ±16V | 3810 pF @ 25 V | - | - | IPAK | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLU8721-701PBFMOSFET N-CH 30V 65A I-PAK Infineon Technologies |
2,435 | - |
|
数据表 |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | Surface Mount | 2.35V @ 25µA | 13 nC @ 4.5 V | 30 V | ±20V | 1030 pF @ 15 V | - | - | I-PAK (LF701) | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB100N06S3-04MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
7,353 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 4.1mOhm @ 80A, 10V | Surface Mount | 4V @ 150µA | 314 nC @ 10 V | 55 V | ±20V | 14230 pF @ 25 V | - | - | PG-TO263-3-2 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
SPU07N60C3BKMA1MOSFET N-CH 650V 7.3A TO251-3 Infineon Technologies |
4,443 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 3.9V @ 350µA | 27 nC @ 10 V | 650 V | ±20V | 790 pF @ 25 V | - | - | PG-TO251-3-21 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
