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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF5806TRPBF

IRF5806TRPBF

MOSFET P-CH 20V 4A MICRO6

Infineon Technologies

7,384 -
IRF5806TRPBF

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 4.5V 86mOhm @ 4A, 4.5V Surface Mount 1.2V @ 250µA 11.4 nC @ 4.5 V 20 V ±20V 594 pF @ 15 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
IRFS33N15DTRLP

IRFS33N15DTRLP

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies

4,919 -
IRFS33N15DTRLP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 56mOhm @ 20A, 10V Surface Mount 5.5V @ 250µA 90 nC @ 10 V 150 V ±30V 2020 pF @ 25 V - - D2PAK - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ)
IRLL2703TRPBF

IRLL2703TRPBF

MOSFET N-CH 30V 3.9A SOT223

Infineon Technologies

8,445 -
IRLL2703TRPBF

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.9A (Ta) 4V, 10V 45mOhm @ 3.9A, 10V Surface Mount 2.4V @ 250µA 14 nC @ 5 V 30 V ±16V 530 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
IRL3716STRLPBF

IRL3716STRLPBF

MOSFET N-CH 20V 180A D2PAK

Infineon Technologies

9,468 -
IRL3716STRLPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V Surface Mount 3V @ 250µA 79 nC @ 4.5 V 20 V ±20V 5090 pF @ 10 V - - D2PAK - 210W (Tc) -55°C ~ 175°C (TJ)
IRLR014NTRPBF

IRLR014NTRPBF

MOSFET N-CH 55V 10A DPAK

Infineon Technologies

4,005 -
IRLR014NTRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V Surface Mount 1V @ 250µA 7.9 nC @ 5 V 55 V ±16V 265 pF @ 25 V - - TO-252AA (DPAK) - 28W (Tc) -55°C ~ 175°C (TJ)
IRFR3911TRPBF

IRFR3911TRPBF

MOSFET N-CH 100V 14A DPAK

Infineon Technologies

5,620 -
IRFR3911TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 115mOhm @ 8.4A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 100 V ±20V 740 pF @ 25 V - - TO-252AA (DPAK) - 56W (Tc) -55°C ~ 175°C (TJ)
IRLR024ZTRLPBF

IRLR024ZTRLPBF

MOSFET N-CH 55V 16A DPAK

Infineon Technologies

6,088 -
IRLR024ZTRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V Surface Mount 3V @ 250µA 9.9 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
IRFS41N15DTRLP

IRFS41N15DTRLP

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies

3,579 -
IRFS41N15DTRLP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 41A (Tc) 10V 45mOhm @ 25A, 10V Surface Mount 5.5V @ 250µA 110 nC @ 10 V 150 V ±30V 2520 pF @ 25 V - - D2PAK - 3.1W (Ta) -55°C ~ 175°C (TJ)
IRFS59N10DTRLP

IRFS59N10DTRLP

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies

5,630 -
IRFS59N10DTRLP

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 10V 25mOhm @ 35.4A, 10V Surface Mount 5.5V @ 250µA 114 nC @ 10 V 100 V ±30V 2450 pF @ 25 V - - D2PAK - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ)
IRF1503STRLPBF

IRF1503STRLPBF

MOSFET N-CH 30V 75A D2PAK

Infineon Technologies

7,415 -
IRF1503STRLPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 3.3mOhm @ 140A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 30 V ±20V 5730 pF @ 25 V - - D2PAK - 200W (Tc) -55°C ~ 175°C (TJ)
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