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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP057N06N3GXKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
7,102 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | Through Hole | 4V @ 58µA | 82 nC @ 10 V | 60 V | ±20V | 6600 pF @ 30 V | - | - | PG-TO220-3 | - | 115W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB80N06SL2-7N-CHANNEL AUTOMOTIVE MOSFET Infineon Technologies |
600 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | Surface Mount | 2V @ 150µA | 130 nC @ 10 V | 55 V | ±20V | 3160 pF @ 25 V | - | - | PG-TO263-3-2 | - | 210W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF1018ESLPBFMOSFET N-CH 60V 79A TO262 Infineon Technologies |
4,297 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | Through Hole | 4V @ 100µA | 69 nC @ 10 V | 60 V | ±20V | 2290 pF @ 50 V | - | - | TO-262 | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
64-2105PBFMOSFET N-CH 40V 75A TO262 Infineon Technologies |
4,064 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 3.7mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 40 V | ±20V | 4340 pF @ 25 V | - | - | TO-262 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFP4410ZPBFMOSFET N-CH 100V 97A TO247AC Infineon Technologies |
5,431 | - |
|
数据表 |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 120 nC @ 10 V | 100 V | ±20V | 4820 pF @ 50 V | - | - | TO-247AC | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFS4410ZPBFMOSFET N-CH 100V 97A D2PAK Infineon Technologies |
4,964 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | Surface Mount | 4V @ 150µA | 120 nC @ 10 V | 100 V | ±20V | 4820 pF @ 50 V | - | - | D2PAK | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFSL3607PBFMOSFET N-CH 75V 80A TO262 Infineon Technologies |
6,527 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | Through Hole | 4V @ 100µA | 84 nC @ 10 V | 75 V | ±20V | 3070 pF @ 50 V | - | - | TO-262 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFSL3806PBFMOSFET N-CH 60V 43A TO262 Infineon Technologies |
7,745 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | Through Hole | 4V @ 50µA | 30 nC @ 10 V | 60 V | ±20V | 1150 pF @ 50 V | - | - | TO-262 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFSL4227PBFMOSFET N-CH 200V 62A TO262 Infineon Technologies |
9,142 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | Through Hole | 5V @ 250µA | 98 nC @ 10 V | 200 V | ±30V | 4600 pF @ 25 V | - | - | TO-262 | - | 330W (Tc) | -40°C ~ 175°C (TJ) |
|
|
IRFSL4310ZPBFMOSFET N-CH 100V 120A TO262 Infineon Technologies |
4,474 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | Through Hole | 4V @ 150µA | 170 nC @ 10 V | 100 V | ±20V | 6860 pF @ 50 V | - | - | TO-262 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
