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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IAUCN04S7N056DATMA1MOSFET_(20V 40V) Infineon Technologies |
485 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IAUCN04S7L014ATMA1MOSFET_(20V 40V) Infineon Technologies |
477 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A | 10V | - | Surface Mount | - | - | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | - | -55°C ~ 175°C |
|
IPU60R1K5CEAKMA2MOSFET N-CH 600V 3.1A TO251-3 Infineon Technologies |
924 | - |
|
数据表 |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | Through Hole | 3.5V @ 90µA | 9.4 nC @ 10 V | 600 V | ±20V | 200 pF @ 100 V | - | - | PG-TO251-3 | - | 49W (Tc) | -40°C ~ 150°C (TJ) |
|
|
ISP16DP10LMAXTSA1ISP16DP10LMAXTSA1 Infineon Technologies |
1,000 | - |
|
数据表 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2.3A (Ta), 3.9A (Tc) | 4.5V, 10V | 167mOhm @ 2.2A, 10V | Surface Mount | 2V @ 1.037mA | 55 nC @ 10 V | 100 V | ±20V | 2100 pF @ 50 V | AEC-Q101 | - | PG-SOT223-4-21 | Automotive | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP339N20NM6AKSA1MOSFET Infineon Technologies |
88 | - |
|
数据表 |
OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6.8A (Ta), 39A (Tc) | 10V, 15V | 31.8mOhm @ 26A, 15V | Through Hole | 4.5V @ 52µA | 24 nC @ 10 V | 200 V | ±20V | 1600 pF @ 100 V | - | - | PG-TO220-3-1 | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB240N04S41R0ATMA1MOSFET N-CH 40V 240A TO263-7 Infineon Technologies |
43 | - |
|
数据表 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | Surface Mount | 4V @ 180µA | 221 nC @ 10 V | 40 V | ±20V | 17682 pF @ 25 V | AEC-Q101 | - | PG-TO263-7-3 | Automotive | 231W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI90R500C3XKSA2MOSFET N-CH 900V 11A TO262-3 Infineon Technologies |
83 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | Through Hole | 3.5V @ 740µA | 68 nC @ 10 V | 900 V | ±20V | 1700 pF @ 100 V | - | - | PG-TO262-3-1 | - | 156W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA65R110CFDXKSA2MOSFET N-CH 650V 31.2A TO220 Infineon Technologies |
50 | - |
|
数据表 |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 650 V | ±20V | 3240 pF @ 100 V | - | - | PG-TO220-FP | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
AIMCQ120R160M1TXTMA1SIC_DISCRETE Infineon Technologies |
100 | - |
|
数据表 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 18.6A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | Surface Mount | 5.1V @ 1.5mA | 14 nC @ 20 V | 1200 V | +25V, -10V | 350 pF @ 800 V | AEC-Q101 | - | PG-HDSOP-22 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AIMCQ120R120M1TXTMA1SIC_DISCRETE Infineon Technologies |
100 | - |
|
数据表 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 24A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | Surface Mount | 5.1V @ 2.2mA | 18 nC @ 20 V | 1200 V | +25V, -10V | 458 pF @ 800 V | AEC-Q101 | - | PG-HDSOP-22 | Automotive | 161W (Tc) | -55°C ~ 175°C (TJ) |
