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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPDQ60T017S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
100 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPQC60T017S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
100 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AIMCQ120R030M1TXTMA1SIC_DISCRETE Infineon Technologies |
63 | - |
|
数据表 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 78A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | Surface Mount | 5.1V @ 8.6mA | 57 nC @ 20 V | 1200 V | +25V, -10V | 1738 pF @ 800 V | AEC-Q101 | - | PG-HDSOP-22 | Automotive | 417W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AIMZHN120R020M1TXKSA1SIC_DISCRETE Infineon Technologies |
30 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 100A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | Through Hole | 5.1V @ 13.7mA | 82 nC @ 20 V | 1200 V | +23V, -5V | 2667 pF @ 800 V | AEC-Q101 | - | PG-TO247-4-14 | Automotive | 429W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IDYH50G200C5XKSA1SIC DISCRETE Infineon Technologies |
75 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF100R12W1T7EB11BPSA1EASY STANDARD Infineon Technologies |
24 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF2804S-7PPBFMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
6,291 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | Surface Mount | 4V @ 250µA | 260 nC @ 10 V | 40 V | ±20V | 6930 pF @ 25 V | - | - | D2PAK (7-Lead) | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD105N03LGATMA1MOSFET N-CH 30V 35A TO252-3 Infineon Technologies |
9,966 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 1500 pF @ 15 V | - | - | PG-TO252-3-11 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP50R350CPXKSA1MOSFET N-CH 550V 10A TO220-3 Infineon Technologies |
8,636 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | Through Hole | 3.5V @ 370µA | 25 nC @ 10 V | 550 V | ±20V | 1020 pF @ 100 V | - | - | PG-TO220-3-1 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP60R250CPXKSA1MOSFET N-CH 650V 12A TO220-3 Infineon Technologies |
3,285 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | Through Hole | 3.5V @ 440µA | 35 nC @ 10 V | 650 V | ±20V | 1200 pF @ 100 V | - | - | PG-TO220-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
