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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPI16N50C3HKSA1MOSFET N-CH 560V 16A TO262-3 Infineon Technologies |
4,862 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | Through Hole | 3.9V @ 675µA | 66 nC @ 10 V | 560 V | ±20V | 1600 pF @ 25 V | - | - | PG-TO262-3-1 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPI20N60C3XKSA1MOSFET N-CH 650V 20.7A TO262-3 Infineon Technologies |
6,941 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | Through Hole | 3.9V @ 1mA | 114 nC @ 10 V | 650 V | ±20V | 2400 pF @ 25 V | - | - | PG-TO262-3-1 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPI20N65C3XKSA1MOSFET N-CH 650V 20.7A TO262-3 Infineon Technologies |
2,119 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | Through Hole | 3.9V @ 1mA | 114 nC @ 10 V | 650 V | ±20V | 2400 pF @ 25 V | - | - | PG-TO262-3-1 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW65R190C7XKSA1MOSFET N-CH 650V 13A TO247-3 Infineon Technologies |
85 | - |
|
数据表 |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | Through Hole | 4V @ 290µA | 23 nC @ 10 V | 650 V | ±20V | 1150 pF @ 400 V | - | - | PG-TO247-3 | - | 72W (Tc) | -55°C ~ 150°C (TJ) |
|
IPW60R125CFD7XKSA1MOSFET N-CH 600V 18A TO247-3 Infineon Technologies |
30 | - |
|
数据表 |
OptiMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | Through Hole | 4.5V @ 390µA | 36 nC @ 10 V | 600 V | ±20V | 1503 pF @ 400 V | - | - | PG-TO247-3 | - | 92W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP65R099CFD7AAKSA1MOSFET N-CH 650V 24A TO220-3 Infineon Technologies |
38 | - |
|
数据表 |
CoolMOS™ CFD7A | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | Through Hole | 4.5V @ 630µA | 53 nC @ 10 V | 650 V | ±20V | 2513 pF @ 400 V | AEC-Q101 | - | PG-TO220-3 | Automotive | 127W (Tc) | -40°C ~ 150°C (TJ) |
|
SPP11N65C3XKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
3,774 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | Through Hole | 3.9V @ 500µA | 60 nC @ 10 V | 650 V | ±20V | 1200 pF @ 25 V | - | - | PG-TO220-3-1 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP80N06S2-07MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
2,511 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | Through Hole | 4V @ 180µA | 110 nC @ 10 V | 55 V | ±20V | 4540 pF @ 25 V | - | - | PG-TO220-3-1 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP80N06S2-08MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
7,236 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 96 nC @ 10 V | 55 V | ±20V | 3800 pF @ 25 V | - | - | PG-TO220-3-1 | - | 215W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SPP80N06S2-09MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
2,645 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | Through Hole | 4V @ 125µA | 80 nC @ 10 V | 55 V | ±20V | 3140 pF @ 25 V | - | - | PG-TO220-3-1 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
